METAL CLAD LAYER FORMATION FOR CMOSFETs/SIMOX BY SELECTIVE CHEMICAL VAPOR DEPOSITION OF TUNGSTEN

机译：钨的选择性化学气相沉积法形成CMOSFET / SIMOX的金属覆层

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Selective chemical vapor deposition to form a tungsten-clad layer for CMOS/SIMOX devices is described. It is found that hydrogen plasma treatment produces a clean p~+-silicon surface. The addition of small amounts of oxygen to source gases in silane reduction of WF_6 promotes low-resistivity α-W growth. The combination of the hydrogen plasma treatment of the silicon surface before the deposition and the oxygen addition during the tungsten deposition enables the formation of a low-sheet-resistance clad layer with low-contact resistivity in LSIs without degrading the yield. The application of this selective tungsten chemical vapor deposition to 0.2-μm-gate CMOS/SIMOX devices exhibits excellent device performance.

机译：描述了用于形成用于CMOS / SIMOX器件的钨包覆层的选择性化学气相沉积。发现氢等离子体处理产生干净的p +硅表面。在WF_6的硅烷还原中向源气体中添加少量氧气可促进低电阻率α-W生长。沉积之前硅表面的氢等离子体处理和钨沉积期间的氧添加的结合使得能够在LSI中形成具有低接触电阻率的低薄层电阻包覆层，而不会降低产量。这种选择性钨化学气相沉积在0.2-μm栅CMOS / SIMOX器件上的应用表现出出色的器件性能。

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来源
《Symposium on Interconnects and Contact Metallization for ULSI Oct 17-22, 1999, Honolulu, HI》|1999年|p.10-21|共12页
会议地点 Honolulu HI(US)
作者
Hiromu Ishii; Yasuhiro Sato; Toshihiko Kosugi; Yoshinobu Arita; Masahiko Maeda;
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作者单位

NTT Telecommunications Energy Laboratories 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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1. High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition [J] . Yang G.W., Hwu R.J. IEEE Journal of Quantum Electronics . 1999,第10期

机译：高性能980 nm量子阱激光器，采用无铝InGaAs-InGaAsP有源区和通过金属有机化学气相沉积法生长的AlGaAs包层的混合材料系统
2. 1.28 μm lasing from stacked InAs/GaAs quantum dots with low-temperature-grown AlGaAs cladding layer by metalorganic chemical vapor deposition [J] . Jun Tatebayashi, Nobuaki Hatori, Mitsuru Ishida, Applied Physics Letters . 2005,第5期

机译：通过金属有机化学气相沉积从堆叠的InAs / GaAs量子点和低温生长的AlGaAs覆层发射1.28μm激光
3. Lasing at 1.28 /spl mu/m of InAs-GaAs quantum dots with AlGaAs cladding layer grown by metal-organic chemical vapor deposition [J] . Tatebayashi J., Ishida M., Hatori N., IEEE journal of selected topics in quantum electronics . 2005,第5期

机译：以1.28 / spl mu / m的InAs-GaAs量子点发射激光，并通过金属有机化学气相沉积法生长AlGaAs包覆层
4. IMPROVED CHEMICAL VAPOR DEPOSITION OF DIAMOND LAYERS ON CEMENTED CARBIDES BY FORMATION OF TUNGSTEN-COBALT-BORON PHASES IN THE INTERFACE REGION [C] . Rainer Cremer, Juergen Mueller, Dieter Neuschuetz, International Symposia on Fundamental Gas-Phase and Surface Chemistry of Vapor-Phase Deposition II and Process Control, Diagnostics, and Modeling in Semiconductor Manufacturing IV, 2001 . 2001

机译：界面区域钨-钴-硼相的形成改善了硬质合金上金刚石层的化学气相沉积
5. Metal-oxide-semiconductor devices based on epitaxial germanium layers grown selectively directly on silicon substrates by ultra-high-vacuum chemical vapor deposition [D] . Donnelly, Joseph Patrick 2009

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6. Scalable Synthesis of Few-Layered 2D Tungsten Diselenide(2H-WSe2) Nanosheets Directly Grown on Tungsten (W) FoilUsing Ambient-Pressure Chemical Vapor Deposition for Reversible Li-IonStorage [O] . Rajashree Konar, Rosy, Ilana Perelshtein, 2020

机译：可扩展合成少数层2D钨丁烯烯（2h-wse2）纳米胸底直接在钨（w）箔上生长使用环境压力化学气相沉积来反转锂离子贮存
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机译：选择性低压化学气相沉积形成钨层的界面结构

METAL CLAD LAYER FORMATION FOR CMOSFETs/SIMOX BY SELECTIVE CHEMICAL VAPOR DEPOSITION OF TUNGSTEN

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