Synthesis of Continuous SmSi_2 Layers on Si by Samarium Ion Implantation Using A Metal Vapor Vacuum Arc Ion Source

机译：金属蒸气真空电弧离子源注入Sa离子在Si上合成连续SmSi_2层

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Samarium ion implantation was conducted to synthesize Sm-disilicide films on silicon wafers, using a metal vapor vacuum arc ion source and the continuous SmSi_2 films were directly obtained with neither external heating during implantation nor post-annealing. Diffraction and surface morphology analysis confirmed the formed Sm-disilicilde films were of a fine crystalline structure under appropriate experimental conditions. Besides, the formation mechanism of the SmSi_2 phase is also discussed in terms of the temperature rise caused by ion beam heating and the effect of ion dose on the properties of the SmSi_2 films.

机译：使用金属蒸汽真空电弧离子源进行离子注入以在硅片上合成Sm二硅化物膜，并且在注入过程中不进行外部加热也不进行后退火的情况下，直接获得连续的SmSi_2膜。衍射和表面形态分析证实，在适当的实验条件下，所形成的Sm-硅化物薄膜具有良好的晶体结构。此外，还从离子束加热引起的温度升高以及离子剂量对SmSi_2薄膜性能的影响等方面探讨了SmSi_2相的形成机理。

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《Symposium on Ion Beam Synthesis and Processing of Advanced Materials held Nov 27-29, 2000, Boston, Massachusetts, U.S.A.》|2000年|p.5.29.1-5.29.6|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
X.Q.Cheng; H.N.Zhu; B.X.Liu;
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Department of Materials Science and Engineering Tsinghua University, Beijing 100084, CHINA;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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1. Growth kinetics of stoichiometric SiC layers formed by high fluence carbon implantation into silicon using a metal vapor vacuum arc ion source [J] . Wang L, Zhao YE, Chen DH, Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2005,第3期

机译：使用金属蒸气真空电弧离子源高通量碳注入硅形成的化学计量SiC层的生长动力学
2. Composition, structure and optical properties of SiC buried layer formed by high dose carbon implantation into Si using metal vapor vacuum arc ion source [J] . Dihu Chen, S.P. Wong, Shenghong Yang, Thin Solid Films . 2003,第1a2期

机译：金属蒸气真空电弧离子源高剂量碳注入Si形成的SiC埋层的组成，结构和光学性能
3. Low-temperature, direct synthesis of β-SiC by metal vapor vacuum arc ion source implantation [J] . Z.Q. Liu, J.F. Liu, J.Y. Feng Materials Letters . 2001,第5a6期

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4. Synthesis of Continuous SmSi_2 layers on Si by Samarium Ion Implantation Using A Metal Vapor Vacuum Arc Ion Source [C] . X.Q. Cheng, H.N. Zhu, B.X. Liu Materials Research Society Symposium . 2001

机译：使用金属蒸汽真空电弧离子源通过钐离子注入在Si上的连续SMSI_2层的合成
5. Properties of magnetic layers fabricated by Metal Vapor Vacuum Arc (MEVVA) ion implantation into germanium. [D] . Ranganathan, Venugopal. 2001

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6. Synthesis of 2D transition metal dichalcogenides by chemical vapor deposition with controlled layer number and morphology [O] . Jiawen You, Md Delowar Hossain, Zhengtang Luo 2018

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7. Operational characteristics of a metal vapor vacuum arc ion source [O] . Hiroshi Shiraishi, Ian G. Brown 1990

机译：金属蒸汽真空电弧离子源的操作特性

Synthesis of Continuous SmSi_2 Layers on Si by Samarium Ion Implantation Using A Metal Vapor Vacuum Arc Ion Source

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