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首页> 外文会议>Symposium on Ion Beam Synthesis and Processing of Advanced Materials held Nov 27-29, 2000, Boston, Massachusetts, U.S.A. >Interactions of Point Defects and Impurities With Open Volume Defects in Silicon
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Interactions of Point Defects and Impurities With Open Volume Defects in Silicon

机译：硅中点缺陷和杂质与开放体积缺陷的相互作用

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摘要

Ion implantation can produce open volume detects in silicon by one of two methods, either by II or He implantation followed by annealing to create a band of nanocavities and also by direct implantation to reasonably high doses, which results in a vacancy excess region at depths less than about half the projected ion range. This paper reviews three interesting aspects of open volume defects. In the first case, the very efficient gettering of fast diffusing metals to nanocavities formed by H-implantation is illustrated. In addition, the non-equilibrium behaviour of Cu_3Si precipitation and dissolution at cavities is examined. The second example treats the interaction of irradiation-induced defects with nanocavities, particularly preferential amorphisation at open volume defects and subsequent cavity shrinkage. The final example illustrates the coalescence of excess vacancies into small voids on annealing and the use of gettering of Au to detect such open volume defects.
机译：离子注入可以通过以下两种方法之一在硅中产生开放的体积检测：II注入或He注入，然后退火以形成纳米腔带，还可以通过直接注入到相当高的剂量来进行，从而导致深度较小的空位过多区域超过预计离子范围的一半本文回顾了开放体积缺陷的三个有趣方面。在第一种情况下，说明了快速扩散的金属非常有效地吸收到通过H注入形成的纳米腔中。另外，研究了Cu_3Si的非平衡行为以及在腔中的溶解。第二个实例处理了辐射诱导的缺陷与纳米腔的相互作用，特别是在开放体积缺陷处的优先非晶化和随后的腔收缩。最后一个例子说明了退火过程中多余的空位聚结成小的空隙，以及使用吸金的Au来检测这种开放体积缺陷。

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