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首页> 外文会议>Symposium on Ion Beam Synthesis and Processing of Advanced Materials held Nov 27-29, 2000, Boston, Massachusetts, U.S.A. >High-Fluence Implantation of Erbium into Silicon-Germanium Alloys: Structural and Thermal Properties
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High-Fluence Implantation of Erbium into Silicon-Germanium Alloys: Structural and Thermal Properties

机译：硅锗合金高效注入Alloy：结构和热性能

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摘要

High-quality crystalline Si_(1-x)Ge_x (x=0.10 and 0.25) alloys were implanted with 70 keV Er ions at temperatures of 350℃ and 550C to a fluence of 10~(15) cm~(-2). In-situ Rutherford backscattering/channeling (RBS) analysis supplemented with transmission electron microscopy (TEM) showed that as-implanted alloys were in form of ternary solid solutions with a peak Er concentration of 1 at.% without any trace of Er-Si or Er-Ge precipitation. In the samples implanted at 350℃ Er atoms were found to be distributed randomly in the amorphous host matrix. Post-implantation annealing at different temperatures up to 600℃ showed that the solid phase epitaxial regrowth of the damaged layers strongly depends on both the Ge concentration in the alloys and the temperature of annealing. Along with the recrystallization of the damaged matrix, annealing was observed to induce simultaneous removal of nearly all the implanted Er as the recrystallization front progresses towards the surface. In contrast, high temperature implantation at 550℃ led to spontaneous recovery of the alloy crystallinity and incorporation of considerable fraction of implanted Er atoms on regular tetrahedral interstitial sites in the host lattice.
机译：在350℃和550℃的温度下，向70 keV Er离子注入高质量的Si_（1-x）Ge_x（x = 0.10和0.25）合金，注入量为10〜（15）cm〜（-2）。原位卢瑟福反向散射/通道分析（RBS）和透射电子显微镜（TEM）分析表明，植入后的合金为三元固溶体形式，峰值Er浓度为1 at。％，没有任何痕量的Er-Si或-锗沉淀。在350℃下注入的样品中，发现Er原子随机分布在非晶态基质中。最高至600℃的不同温度下的注入后退火表明，损伤层的固相外延长生强烈依赖于合金中的Ge浓度和退火温度。随着受损基质的重结晶，观察到退火会导致随着重结晶前沿向表面前进，几乎所有注入的Er同时被清除。相反，在550℃下高温注入导致合金结晶度的自发恢复，并且在主体晶格的规则四面体间隙位置上注入了大量的fraction原子。

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