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首页> 外文会议>Symposium on Ion Beam Synthesis and Processing of Advanced Materials held Nov 27-29, 2000, Boston, Massachusetts, U.S.A. >Growth and Characterization of Erbium Suicides Synthesized by Metal Vapor Vacuum Arc Ion Implantation
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Growth and Characterization of Erbium Suicides Synthesized by Metal Vapor Vacuum Arc Ion Implantation

机译：金属蒸气真空电弧离子注入合成的Su的生长和表征

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摘要

Erbium atoms were implanted into p-type Si (111) wafers at an extraction voltage of 60 kV to doses ranging from 5Xl0~(16)) to 2Xl0~(17) cm~(-2) using a metal vapour vacuum arc (MEVVA) ion source. The implantation was performed with beam current densities from 3 to 26 μA/cm~2 corresponding to substrate temperatures ranging from 85 to 245℃. The characterization of the as-implanted and annealed samples was performed using Rutherford backscultering spcctromctry, atomic force microscopy and x-ray diffraction. To determine the sputtering yield, masked implantation experiments were performed so that the thickness of the sputtered layer at different substrate temperatures can be obtained directly by an α-step surface profiler. The results showed that ErSi_(2-x) was directly formed by MEVVA implantation when the substrate temperature was higher than about 160℃. The effects of the implant dose and the beam current density on the retained dose, the sputtering yield and the surface morphology of the implanted samples were also studied.
机译：使用金属蒸气真空电弧（MEVVA）以60 kV的提取电压将5原子注入p型Si（111）晶片中，剂量范围为5X10〜（16））至2X10〜（17）cm〜（-2）。 ）离子源。注入的束流密度为3至26μA/ cm〜2，对应的衬底温度为85至245℃。植入后和退火后的样品的表征是使用卢瑟福反向化学分析仪，原子力显微镜和X射线衍射进行的。为了确定溅射的产量，进行了掩膜注入实验，以便可以通过α台阶表面轮廓仪直接获得在不同基板温度下的溅射层的厚度。结果表明，当衬底温度高于160℃左右时，通过MEVVA注入直接形成ErSi_（2-x）。还研究了注入剂量和束流密度对保留剂量，溅射产率和注入样品表面形态的影响。

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