Post Implantation Treatment of Silicon Carbide-Based Sensors for Hydrogen Detection Properties Enhancement

机译：碳化硅基传感器的植入后处理，可增强氢的检测性能

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Palladium ion implantation was performed at energies of 35 keV, 50 keV and 100 keV, at both room temperature (RT) and 500 ℃, on two identical sets of 6H, n-typc silicon carbide samples. Then, one set of samples was subjected to a post-implantation sputtering process, in order to eliminate the substrate layer damaged by the palladium ions during implantation. Electrical and micro-Raman measurements have been performed on both sets of samples, aiming for a better understanding of the chemical processes that take place in the presence of hydrogen atmosphere in the chemical sensors prepared this way.

机译：在两组相同的6H，n-typc碳化硅样品上，分别在室温（RT）和500℃下以35 keV，50 keV和100 keV的能量进行钯离子注入。然后，对一组样品进行注入后溅射工艺，以消除注入过程中被钯离子损坏的衬底层。两组样品都进行了电和微拉曼测量，目的是更好地了解以这种方式制备的化学传感器中存在氢气氛时发生的化学过程。

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《Symposium on Ion Beam Synthesis and Processing of Advanced Materials held Nov 27-29, 2000, Boston, Massachusetts, U.S.A.》|2000年|p.5.15.1-5.15.6|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
I. C. Muntele; C. I. Muntele; D. Ila; R. L. Zimmerman; D. B. Poker; D. K. Hensley;
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Center for Irradiation of Materials, Alabama AM University, Normal, AL;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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2. Hydrogen plasma treatment confers enhanced bioactivity to silicon carbide-based nanowires promoting osteoblast adhesion [J] . Ghezzi Benedetta, Lagonegro Paola, Attolini Giovanni, Materials science & engineering . 2021,第Feba期

机译：氢等离子体处理赋予碳化硅基纳米线的增强的生物活性促进成骨细胞粘附性
3. Micro-cutting of silicon implanted with hydrogen and post-implantation thermal treatment [J] . Emil V. Jelenkovic, Suet To, B. Sundaravel, Applied Physics . 2016,第7期

机译：氢注入硅的微切割和注入后热处理
4. Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals [J] . J. Bornacelli, J. A. Reyes-Esqueda, L. Rodriguez-Fernandez, Journal of nanotechnology . 2014,第期

机译：金属离子注入促进二氧化硅基体中氢的扩散以改善硅纳米晶的发射性能
5. Post Implantation Treatment of Silicon Carbide-Based Sensors for Hydrogen Detection Properties Enhancement [C] . I.C. Muntele, C.IM. Muntele, D. Ila Materials Research Society Symposium . 2001

机译：基于碳化硅传感器的后植入处理性能增强
6. Electrical and optical characterization of intrinsic and ion-implantation induced defects in 6-hydrogen-silicon carbide and 4-hydrogen-silicon carbide. [D] . Scott, Michael Buryl. 1999

机译：6氢碳化硅和4氢碳化硅中本征和离子注入引起的缺陷的电学和光学表征。
7. Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications [O] . Seongjeen Kim, Jehoon Choi, Minsoo Jung, 2013

机译：用于高温应用的基于碳化硅的氢气传感器
8. Micro-cutting of silicon implanted with hydrogen and post-implantation thermal treatment [O] . Jelenković EV, To S, Sundaravel B, 2016

机译：氢注入硅的微切割和注入后热处理
9. Silicon Carbide-Based Hydrogen and Hydrocarbon Gas Detection [R] . Hunter, G. W., Neudeck, P. G., Chen, L., 1995

机译：基于碳化硅的氢和烃气检测

Post Implantation Treatment of Silicon Carbide-Based Sensors for Hydrogen Detection Properties Enhancement

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