首页> 外文会议>Symposium on Magnetic Ultrathin Films,Multilayers and Surface --1997 March 31-April 4,1997, San Francisco, California, U.S.A >Magnetoresistance effects in granular thin layers formed by high dose iron implantation into silicon
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Magnetoresistance effects in granular thin layers formed by high dose iron implantation into silicon

机译:高剂量铁注入硅形成的颗粒状薄层的磁阻效应

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High dose iron implantation into silicon substrates has been performed with a metal vapor vacuum arc ion source to doses ranging from 5x10~16 to 2x10~17 cm~-2 at various beam current densities. The magnetoresistance (MR) effects in these implanted granular layers were studied at temperatures from 15K to 300 K. A positive MR effect, i.e., an increase in the resistance at the presnece of a magnetic field, was observed at temperatures lower than about 40K in samples prepared under appropriate implantation conditions. The magnitude of the resistance value at a magnetic field intensity H and that at zero field, was found to depend not only on the implantation dose but also on the beam curretn density. This is attributed to the beam heating effect during implantation which affects the formation of the microstructures. The ratio DELTA R/R_o was found to attain high values larger than 400
机译:已经使用金属蒸气真空电弧离子源以不同的束电流密度将高剂量的铁注入到硅衬底中,剂量范围为5x10〜16到2x10〜17 cm〜-2。在15K至300 K的温度下研究了这些植入的颗粒层中的磁阻(MR)效应。在温度低于约40K的情况下,观察到了正MR效应,即在磁场作用下电阻增加。在适当的植入条件下制备的样品。发现在磁场强度H下和在零场下的电阻值的大小不仅取决于注入剂量,而且还取决于射束电流密度。这归因于植入期间的束加热效应,其影响了微结构的形成。发现比率DELTA R / R_o获得大于400的高值

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