Structural and Optical Properties of Strained Gallium Nitride Nanowires

机译：应变氮化镓纳米线的结构和光学性质

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Bulk-quantity single crystalline wurtzite gallium nitride nanowires with a mean diameter of 25 nm were synthesized on silicon substrate using a catalyst-assisted reaction of gallium and gallium nitride mixture with ammonia. They exhibit a strong and broad photoluminescence in the energy range of 2.9-3.6 eV with no yellow band. X-ray diffraction and Raman scattering data suggest that the nanowires would experience biaxial compressive stresses in the inward radial direction and the induced tensile uniaxial stresses in the wire axis. The blue photoluminescence would originate from the recombination of the bound excitons under the compressive and tensile stresses.

机译：利用镓和氮化镓混合物与氨的催化剂辅助反应，在硅衬底上合成了平均直径为25 nm的块状单晶纤锌矿型氮化镓纳米线。它们在2.9-3.6 eV的能量范围内显示出强而宽的光致发光，没有黄带。 X射线衍射和拉曼散射数据表明，纳米线将在向内的径向方向上经受双轴压缩应力，而在线的轴线上产生诱导的单轴拉伸应力。蓝色光致发光将源自结合的激子在压缩应力和拉伸应力下的重组。

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《Symposium on Materials and Devices for Optoelectronics and Microphotonics, Apr 1-5, 2002, San Francisco, California》|2002年|p.163-168|共6页
会议地点 San Francisco CA(US);San Francisco CA(US)
作者
Hee Won Seo; Seung Yong Bae; Jeunghee Park; Hyunik Yang; Kwang Soo Park; Sangsig Kim;
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作者单位

Department of Chemistry, Korea University, Jochiwon 339-700 Korea;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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1. Direct comparison on the structural and optical properties of metal-catalytic and self-catalytic assisted gallium nitride (GaN) nanowires by chemical vapor deposition [J] . Purushothaman V., Venkatesh P. Sundara, Navamathavan R., RSC Advances . 2014,第85期

机译：通过化学气相沉积直接比较金属催化和自催化辅助氮化镓（GaN）纳米线的结构和光学性质
2. Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires [J] . Greil J., Assali S., Isono Y., Nano letters . 2016,第6期

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3. First principles study of structural, electronic and optical properties of indium gallium nitride arsenide lattice matched to gallium arsenide [J] . Ziane Mohamed Issam, Bensaad Zouaoui, Ouahrani Tarik, Materials science in semiconductor processing . 2015,第Null期

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4. Structural and Optical Properties of Strained Gallium Nitride Nanowires [C] . Hee Won Seo, Seung Yong Bae, Jeunghee Park, Materials Research Society Symposium . 2002

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5. Optical and structural properties of erbium-doped gallium nitride/indium gallium nitride materials and devices synthesized by metal organic chemical vapor deposition [D] . Ugolini, Cristofer Russell 2008

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6. Optical Properties of Strained Wurtzite Gallium PhosphideNanowires [O] . J. Greil, S. Assali, Y. Isono, -1

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7. Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires [O] . Greil J., Assali S., Isono Y., 2016

机译：应变纤锌矿型磷化镓纳米线的光学性质

Structural and Optical Properties of Strained Gallium Nitride Nanowires

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