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首页> 外文会议>Symposium on Materials and Devices for Optoelectronics and Microphotonics, Apr 1-5, 2002, San Francisco, California >0GROWTH OF GaN ON POROUS SiC SUBSTRATES BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY
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0GROWTH OF GaN ON POROUS SiC SUBSTRATES BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY

机译：0等离子体辅助分子束外延在多孔SiC衬底上GaN的生长

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摘要

We have explored the growth of GaN on porous SiC substrates by plasma-assisted molecular beam epitaxy. The porous 4H- and 6H-SiC(0001) substrates used in this study contain 1(1 to 100-nm sized pores and a thin skin layer at the surface. This skin layer was partially removed prior to the growth by H-etching. Transmission electron microscopy (TEM) observations indicate that the epitaxial GaN growth initiates from the surface areas between pores, and the exposed surface pores tend to extend into GaN as open tubes and trap Ga droplets. Plan-view TEM observations indicate that the GaN layers grown on porous substrates contain fewer dislocations than layers grown on non-porous substrates by roughly a factor of two. The GaN layers grown on a porous SiC substrate were also found to be mechanically more relaxed than those grown on non-porous substrates; electron diffraction patterns indicate that the former are free of misfit strain or are even in tension after cooling to room temperature.
机译：我们已经通过等离子体辅助分子束外延探索了在多孔SiC衬底上GaN的生长。本研究中使用的多孔4H-和6H-SiC（0001）基板包含1（1至100-nm大小的孔）和表面薄皮层，该皮层在通过H蚀刻生长之前被部分去除。透射电子显微镜（TEM）观察表明外延GaN的生长始于孔之间的表面区域，暴露的表面孔倾向于以敞开的管并捕获Ga液滴的形式延伸到GaN中；平面TEM观察表明，生长的GaN层与在无孔基板上生长的层相比，在无孔基板上沉积的位错比在无孔基板上生长的层的位错少大约两倍；在无孔SiC基板上生长的GaN层比在无孔基板上生长的GaN层在机械上更松弛；表示前者没有失配应变，甚至在冷却到室温后也没有张力。

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