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首页> 外文会议>Symposium on Materials and Devices for Optoelectronics and Microphotonics, Apr 1-5, 2002, San Francisco, California >Electrical and Optical Characteristics of Isoelectronic Al-doped GaN Films Grown by Metal Organic Chemical Vapor Deposition
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Electrical and Optical Characteristics of Isoelectronic Al-doped GaN Films Grown by Metal Organic Chemical Vapor Deposition

机译：金属有机化学气相沉积法生长的等离子掺铝GaN薄膜的电学和光学特性

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摘要

The effects of the isoelectronic Al-doping of GaN grown by metal organic chemical vapor deposition were investigated for the first time using scanning electron microscopy (SEM), Hall measurements, photoluminescence (PL), and time-resolved PL. When a certain amount of Al was incorporated into the GaN films, the room temperature photoluminescence intensity of the films was approximately two orders larger than that of the undoped GaN. More importantly, the electron mobility significantly increased from 130 for the undoped sample to 500 cm~2/Vs for the sample grown at a TMA1 flow rate of 10 μmol/min, while the unintentional background concentration only increased slightly relative to the TMA1 flow. The incorporation of Al as an isoelectronic dopant into GaN was easy during MOCVD growth and significantly improved the optical and electrical properties of the film. This was believed to result from a reduction in the dislocation-related non-radiative recombination centers or certain other defects due to the isoelectronic Al-doping.
机译：首次使用扫描电子显微镜（SEM），霍尔测量，光致发光（PL）和时间分辨的PL研究了通过金属有机化学气相沉积法生长的GaN等电子Al掺杂的影响。当将一定量的Al掺入GaN膜中时，膜的室温光致发光强度比未掺杂的GaN的室温光致发光强度大大约两个数量级。更重要的是，电子迁移率从未掺杂样品的130显着增加到以10μmol/ min的TMA1流速生长的样品的500 cm〜2 / Vs，而意外的背景浓度仅相对于TMA1流速略有增加。在MOCVD生长过程中，将Al作为等电子掺杂剂掺入GaN中很容易，并且显着改善了膜的光学和电学性质。据信这是由于位错相关的非辐射复合中心的减少或由于等电子Al掺杂引起的某些其他缺陷造成的。

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