• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Symposium on Materials and Devices for Optoelectronics and Microphotonics, Apr 1-5, 2002, San Francisco, California >Metalorganic chemical vapor deposition of quaternary AlInGaN multiple quantum well structures for deep ultraviolet emitters
【24h】

Metalorganic chemical vapor deposition of quaternary AlInGaN multiple quantum well structures for deep ultraviolet emitters

机译：用于深紫外发射器的四元AlInGaN多量子阱结构的金属有机化学气相沉积

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We report on the growth of quaternary AlInGaN layers and MQWs by two different melalorganic chemical vapor deposition (MOCVD) techniques such as pulsed atomic layer epitaxy (PALE) and pulsed MOCVD (PMOCVD). For both growth processes, emission wavelength of quaternary MQWs can be tuned from 350 nm to 300 nm by simply changing the unit growth cell configurations. The PALE grown AlInGaN MQWs have a very smooth surface, few band tail states and exhibit a band-to-band emission. The PMOCVD grown AlInGaN MQWs exhibit a high density of band tail states, which strongly enhance spontaneous emission. Based on the characterization by photoluminescence, X-ray diffraction and AFM, both MOCVD techniques grown quaternary samples are shown to be promising for fabricating the active region of deep UV LEDs.
机译：我们通过两种不同的金属有机化学气相沉积（MOCVD）技术（例如脉冲原子层外延（PALE）和脉冲MOCVD（PMOCVD））报告了四元AlInGaN层和MQW的生长。对于这两种生长过程，只需更改单位生长单元的配置，即可将四级MQW的发射波长从350 nm调整为300 nm。 PALE生长的AlInGaN MQW具有非常光滑的表面，几乎没有带尾态，并且具有带间发射。 PMOCVD生长的AlInGaN MQW表现出高密度的带尾态，这极大地增强了自发发射。基于光致发光，X射线衍射和AFM的表征，两种MOCVD技术生长的四元样品均显示出可用于制造深紫外LED的有源区的希望。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号