Synthesis of boron carbide nanowires and nanocrystal arrays by plasma enhanced chemical vapor deposition

机译：等离子体增强化学气相沉积法合成碳化硼纳米线和纳米晶阵列

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A plasma enhanced chemical vapor deposition technique has been developed to grow single crystal boron carbide nanowires and nanonecklace arrays using the single precursor closo-1,2-dicarbadodecaborane (C_2B_(10)h_(12)). Nanowire and nanonecklace growth is expedited by Fe seeding of the substrate. Using the compound Fe-(C_5H_2)_2 as an Fe source, it has been demonstrated that the density of nanowires, as well as the types of nanostructures that grow, can be tailored by controlling the concentration of Fe deposited onto the substrate surface prior to boron carbide deposition.

机译：已经开发出等离子体增强化学气相沉积技术，以使用单一前体closo-1,2-dicarbadodecaborane（C_2B_（10）h_（12））生长单晶碳化硼纳米线和纳米项链阵列。纳米线和纳米项链的生长通过基材的铁晶种加速。使用化合物Fe-（C_5H_2）_2作为Fe源，已证明可以通过控制在沉积之前沉积在基材表面上的Fe的浓度来定制纳米线的密度以及生长的纳米结构的类型。碳化硼沉积。

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《Symposium on Microcrystalline and Nanocrystalline Semiconductors-1998 held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.》|1998年|p.323-327|共5页
会议地点 Boston MA(US)
作者
Daqing Zhang; B. G. Kempton; D. N. McIlroy; Yongjun Geng; M. Grant Norton;
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中图分类无线电电子学、电信技术;
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4. Synthesis of boron carbide nanowires and nanocrystal arrays by plasma enhanced chemical vapor deposition [C] . Daqing Zhang, B. G. Kempton, D. N. McIlroy, Symposium on microcrystalline and nanocrystalline semiconductors . 1999

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Synthesis of boron carbide nanowires and nanocrystal arrays by plasma enhanced chemical vapor deposition

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