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首页> 外文会议>Symposium on Microcrystalline and Nanocrystalline Semiconductors-1998 held November 30-December 3, 1998, Boston, Massachusetts, U.S.A. >Effects of various hydrogen dilution ratios on the performance of thin film nanocrystalline/crystalline silicon solar cells
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Effects of various hydrogen dilution ratios on the performance of thin film nanocrystalline/crystalline silicon solar cells

机译：各种氢稀释比对薄膜纳米晶/晶体硅太阳能电池性能的影响

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Low temperature growth of hydrogenated nanocrystalline silicon film (nc-Si:H) by microwave electron cyclotron resonance chemical vapor deposition has been performed employing a double dilution of silane, using a He carrier for SiH_4 and its subsequent dilution by H_2. A series of Raman spectra and AFM pictures has shown that a very thin (<100A) nc-Si:H layer initially growth with high H_2 dilution on a glass substrate can serve as a seed layer for the subsequent growth of the film with lower H_2 dilution, which results in a higher crystallinity of the whole film. The role of this thin layer in low temperature junction formation has been examined by the insertion of the layer between the interface of both nc-Si:H (deposited with lower H_2 dilution)/c-Si and a-Si:H/c-Si heterojunction type photovoltaic cells. This is to address the knowledge that the device's performance is strongly influenced by the quality of the thin film silicon/crystalline silicon interface. Various thicknesses and H_2 dilution ratios have been used to find the optimized condition providing the best performance of the cells. The maximum efficiency of 10.5percent (J_(sc)=35.1 mA/cm~2, V_(oc)=0.51V and FF=0.59) has been obtained, without an AR coating, by the successive deposition of nc-Si:H film with four different H_2 dilution ratios on a crystalline silicon substrate. This is potentially a low-temperature, low-cost solar cell fabrication process.
机译：已经通过使用硅烷的双重稀释，使用用于SiH_4的He载体和随后的H_2稀释的硅烷，通过微波电子回旋共振化学气相沉积进行了氢化纳米晶硅膜（nc-Si：H）的低温生长。一系列拉曼光谱和AFM图片显示，最初在玻璃基板上以高H_2稀释度生长的非常薄（<100A）的nc-Si：H层可以用作随后生长具有较低H_2膜的种子层稀释，导致整个膜的结晶度更高。该薄层在低温结形成中的作用已通过在nc-Si：H（以较低H_2稀释度沉积）/ c-Si和a-Si：H / c-两者的界面之间插入该层进行了检查。 Si异质结型光伏电池。这是为了解决以下知识：器件的性能受薄膜硅/晶体硅界面质量的强烈影响。已使用各种厚度和H_2稀释比来找到提供电池最佳性能的最佳条件。通过连续沉积nc-Si：H，在不使用AR涂层的情况下，获得的最大效率为10.5％（J_（sc）= 35.1 mA / cm〜2，V_（oc）= 0.51V和FF = 0.59）。晶体硅基板上具有四个不同H_2稀释比的薄膜。这可能是一种低温，低成本的太阳能电池制造工艺。

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