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首页> 外文会议>Symposium on Microcrystalline and Nanocrystalline Semiconductors-1998 held November 30-December 3, 1998, Boston, Massachusetts, U.S.A. >Femtosecond interfacial electron transfer dynamics of CdSe semiconductor nanoparticles
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Femtosecond interfacial electron transfer dynamics of CdSe semiconductor nanoparticles

机译：CdSe半导体纳米粒子的飞秒界面电子转移动力学

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摘要

The effect of the adsorption of an electron donor (thiophenol, TP) on the surface of CdSe nanoparticles (NPs) on the emission and electron-hole dynamics is studied. It is found that while the emission is completely quenched, the effect on the transient bleach recovery of the band gap absorption is only slight. This is explained by a mechanism in which the hole in the valence band of the NP is rapidly neutralized by electron transfer from the TP. However, the excited electron in the conduction band is not transferred to the TP cation, i. e. the electron does not shuttle via the organic mojety as it does when naphthoquinone is adsorbed [1]. The excited electron is rather trapped by surface states. Thus the rate of bleach recovery in the CdSe NP system is determined by the rate of electron trapping and not by hole trapping. Comparable conclusions resulted previously [2] for the CdS NP when the CdS-MV~(2+) system is studied. A comparative discussion of the electron-hole dynamics in these systems (CdSe-NQ, CdS-MN~(2+) and CdSe-TP) is given.
机译：研究了CdSe纳米粒子（NPs）表面电子给体（硫酚，TP）的吸附对发射和电子空穴动力学的影响。已经发现，尽管发射被完全淬灭，但是带隙吸收对瞬时漂白剂恢复的影响很小。这是通过一种机理来解释的，在该机理中，NP价带中的空穴被来自TP的电子转移迅速中和。但是，导带中的激发电子不会转移到TP阳离子上，即。 e。电子不会像吸附萘醌时那样通过有机质子传递[1]。被激发的电子相当容易被表面态所俘获。因此，CdSe NP系统中漂白剂的回收率取决于电子捕获率，而不是空穴捕获率。研究CdS-MV〜（2+）系统时，CdS NP的比较结论先前已有[2]。对这些系统（CdSe-NQ，CdS-MN〜（2+）和CdSe-TP）中的电子空穴动力学进行了比较讨论。

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