Effect of hydrogen plasma treatments at very high frequency on p-type amorphous and microcrystalline silicon films

机译：高频氢等离子体处理对p型非晶和微晶硅膜的影响

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Very high frequency (100 MHz) hydrogen plasma treatments on a-Si:H deposited by plasma enhanced chemical vapour deposition were studied. Ex-situ optical measurements have shown that etching and chemical transport occur as competing phenomena. The one that prevails is determined by the plasma conditions. In particular, very efficient chemical etching is observed for high H_2 flow rates, while, for low H_2 flow rates, the equilibrium is shifted toward deposition, and a structural modification of the sample is observed. The experimental conditions were stressed in the direction of utilizing chemical transport from the cathode to deposit very thin (7 nm) microcrystalline films with a pure H_2 plasma.

机译：研究了通过等离子体增强化学气相沉积在a-Si：H上进行的超高频率（100 MHz）氢等离子体处理。异位光学测量表明，蚀刻和化学传输是相互竞争的现象。普遍存在的一种取决于血浆条件。特别是，对于高H_2流速观察到非常有效的化学蚀刻，而对于低H_2流速观察时，平衡向沉积方向移动，并观察到样品的结构改性。在利用化学物质从阴极传输以沉积具有纯H_2等离子体的非常薄的（7 nm）微晶膜的方向上，对实验条件施加了压力。

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《Symposium on Microcrystalline and Nanocrystalline Semiconductors-1998 held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.》|1998年|p.517-522|共6页
会议地点 Boston MA(US)
作者
E. Centurioni; A. Desalvo; R. Pinghini; R. Rizzoli; C. Summonte; F. Zignani;
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中图分类无线电电子学、电信技术;
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1. Very high frequency hydrogen plasma treatment of growing surfaces: a study of the p-type amorphous to microcrystalline silicon transition [J] . Summonte C., Desalvo A., Zignani F., Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2000,第Pta1期

机译：高频氢等离子体对生长表面的处理：从p型非晶硅到微晶硅过渡的研究
2. Influence of ultrathin amorphous silicon layers on the nucleation of microcrystalline silicon films under hydrogen plasma treatment [J] . Z. W. Zuo, W. T. Guan, Y. Wang, Applied Physics Letters . 2011,第4期

机译：氢等离子体处理超薄非晶硅层对微晶硅膜形核的影响
3. REAL-TIME SPECTROSCOPIC ELLIPSOMETRY STUDY OF THE GROWTH OF AMORPHOUS AND MICROCRYSTALLINE SILICON THIN FILMS PREPARED BY ALTERNATING SILICON DEPOSITION AND HYDROGEN PLASMA TREATMENT [J] . Layadi N., Drevillon B., Solomon I., Physical Review, B. Condensed Matter . 1995,第7期

机译：交替沉积硅和氢等离子体处理制备的非晶态和微晶态硅薄膜的生长的实时光谱分析
4. Effect of hydrogen plasma treatments at very high frequency on p-type amorphous and microcrystalline silicon films [C] . E. Centurioni, A. Desalvo, R. Pinghini, Symposium on microcrystalline and nanocrystalline semiconductors . 1999

机译：氢等离子体处理在高频率对P型无定形和微晶硅膜上的影响
5. Deposition and characterization of hydrogenated amorphous silicon, microcrystalline silicon and silicon-based alloy thin films. [D] . Wang, Cheng. 1991

机译：氢化非晶硅，微晶硅和硅基合金薄膜的沉积和表征。
6. Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix [O] . Shigeru Yamada, Yasuyoshi Kurokawa, Shinsuke Miyajima, 2014

机译：氢等离子体处理非晶碳化硅基体减少硅量子点超晶格结构缺陷的研究
7. Effect of hydrogen plasma precleaning on the removal of interfacial amorphous layer in the chemical vapor deposition of microcrystalline silicon films on silicon oxide surface [O] . Young‐Bae Park, Shi‐Woo Rhee 1996

机译：氧化硅膜在氧化硅膜中微晶硅膜的化学气相沉积中界面非晶层去除氢等离子体的影响
8. Preparation and Characterization of Hydrogenated Amorphous-Silicon Films Produced by Ion Plating and Hydrogenated Amorphous-Boron Films Produced by Glow-Discharge Decomposition. Final Report, April 1, 1980-May 31, 1981 [R] . Cocks F.H, Jones, P. L. 1981

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Effect of hydrogen plasma treatments at very high frequency on p-type amorphous and microcrystalline silicon films

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