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首页> 外文会议>Symposium on Microcrystalline and Nanocrystalline Semiconductors-1998 held November 30-December 3, 1998, Boston, Massachusetts, U.S.A. >Amorphous/microcrystalline phase control in sillicon film deposition for improved solar cell performance
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Amorphous/microcrystalline phase control in sillicon film deposition for improved solar cell performance

机译：硅膜沉积中的非晶/微晶相控制可改善太阳能电池的性能

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摘要

Real time optical studies have provided insights into the growth of hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon (#mu#c-Si:H) thin films by plasma-enhanced chemical vapor deposition as a function of the H_2-dilution gas flow ratio R=[J_2]/[SiH_4], the accumulated film thickness d_b, and the substrate material. Results pertinent to the optimization of a-Si:H-based solar cells have been obtained in studies of Si film growth at moderate to high R on dense amorphous semiconductor film surfaces. For depositions with 15<=R<=80 on freshly-deposited a-Si:H, initial film growth occurs in the amorphous phase. Upon continued growth, however, a transition is observed as crystallites begin to nucleate from the amorphous film. The thickness at which this amorphous-to-microcrystalline (a->#mu#c) transition occurs is found to decrease with increasing R. Based on these results, a deposition phase diagram has been proposed that dexcribes the a->#mu#c transition as a continuous function of R and d_b. We find that the optimum stabilized a-Si:H p-i-n solar cell performance is obtained in an i-layer growth process that is maintained as close as possible to the phase boundary (but on the amorphous side) versus film thickness.
机译：实时光学研究提供了关于等离子体增强化学气相沉积与H_2-的关系的氢化非晶硅（a-Si：H）和微晶硅（＃mu＃c-Si：H）薄膜生长的见解。稀释气体流量比R ＝ [J_2] / [SiH_4]，累积膜厚d_b和基板材料。通过研究在致密的非晶态半导体薄膜表面上中等至高R的Si薄膜生长，已经获得了与基于a-Si：H的太阳能电池优化相关的结果。对于在新鲜沉积的a-Si：H上具有15 <= R <= 80的沉积，初始膜生长发生在非晶相中。然而，在继续生长时，观察到转变，因为微晶开始从非晶膜成核。发现随着R的增加，非晶态到微晶态（a->＃mu＃c）过渡的厚度减小。基于这些结果，提出了一种沉积相图，用于去除a->＃mu＃c c跃迁作为R和d_b的连续函数。我们发现，在i层生长过程中获得了最佳的稳定a-Si：H p-i-n太阳能电池性能，该过程保持相对于膜厚度尽可能接近相界（但在非晶侧）。

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