首页> 外文会议>Symposium on Microcrystalline and Nanocrystalline Semiconductors-1998 held November 30-December 3, 1998, Boston, Massachusetts, U.S.A. >Strongly superlinear light emission and large induced absorption in oxidized porous silicon films
【24h】

Strongly superlinear light emission and large induced absorption in oxidized porous silicon films

机译:氧化多孔硅膜中的强超线性发光和大的诱导吸收

获取原文
获取原文并翻译 | 示例

摘要

The topical properties of oxidized free-standing porous silicon films excited by a cw laser have been investigated. It is found that samples oxidized at 800-950 deg C show a strongly superlinear light emission at an excitation intensity of approx 10 W/cm~2. This emission has a peak at 900-1100 nm and shows a blueshift as the oxidation temperature is increased. These samples also show a very large induced absorption, where the transmittance is found to decrease reversibly by <=99.7percent. The induced absorption increases linearly with increasing pump laser intensity. Both the superlinear emission and the large induced absorption are quenched when the samples are attached to materials with a higher thermal conductivity, suggesting that laser-induced thermal effects are responsible for these phenomena.
机译:研究了用连续激光激发的氧化自支撑多孔硅薄膜的局部特性。发现在800-950℃氧化的样品在约10 W / cm〜2的激发强度下显示出强烈的超线性发光。此发射在900-1100 nm处有一个峰值,并随着氧化温度的升高呈现蓝移。这些样品还显示出非常大的诱导吸收,发现透射率可逆地降低了<= 99.7%。诱导的吸收随着泵浦激光强度的增加而线性增加。当样品附着到具有更高导热率的材料时,超线性发射和大的诱导吸收都被淬灭,这表明这些现象是由激光诱导的热效应引起的。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号