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Auger effect seen in the porous silicon fast luminescent band

机译:在多孔硅快速发光带中观察到俄歇效应

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摘要

Time resolved photoluminescence (PL) measurements are performed on oxidized and fresh porous silicon at room temperature. Comparing the evolution of the nanosecond time delayed PL in both cases, a new feature of the PL spectra is identified: the fast-red band, present as well in fresh or aged samples. The nonlinear excitation intensity dependence of this component is described by a simple model where, the Auger effect inside isolated silicon nanocrystallites plays the dominant role.
机译:在室温下,对氧化的和新鲜的多孔硅进行时间分辨的光致发光(PL)测量。比较两种情况下纳秒延时PL的演变,可以确定PL光谱的新特征:在新鲜或老化的样品中也存在快速红色带。用一个简单的模型描述了该组分的非线性激发强度依赖性,其中,孤立的硅纳米晶体内部的俄歇效应起主要作用。

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