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首页> 外文期刊>Physical Review, B. Condensed Matter >Electrical band-gap energy of porous silicon and the band offsets at the porous-silicon/crystalline-silicon heterojunction measured versus sample temperature
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Electrical band-gap energy of porous silicon and the band offsets at the porous-silicon/crystalline-silicon heterojunction measured versus sample temperature

机译：多孔硅的电气带间隙能量和多孔硅/晶体 - 硅异质结的带偏移与样品温度相比

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摘要

Photocurrent measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon, in the temperature range 10-300 K. From the experimental data set, the electrical band-gap energy of porous silicon is deduced to be (1.80 +/- 0.01) eV. independent of sample temperature. In contrast to this, some temperature variations are observed for the band offsets, reflecting qualitatively the temperature dependence of the fundamental band-gap energy of crystalline silicon. However, whereas the latter decreases monotonically for increasing temperature, a maximum is observed at around 125 K for the conduction-band offset together with a corresponding minimum for the valence-band offset. The results are discussed with the conclusion that for the samples studied here, the electrical band gap in porous silicon is of a molecular nature and cannot be related to quantum-confinement properties of nanocrystals of elemental silicon. [S0163-1829(98)06336-X]. [References: 17]
机译：在晶体硅顶部的一系列样品上进行了光电流测量，在晶体硅顶部组成，在10-300k的温度范围内。从实验数据集中，推导了多孔硅的电气间隙能量（ 1.80 +/- 0.01）EV。独立于样品温度。与此相反，对于带偏移观察到一些温度变化，反映了晶体硅的基本带间隙能量的质量依赖性。然而，而后者单调地减小以增加温度，而在约125k左右观察到导通带偏移的最大值，与价带偏移相应的最小值。结果是讨论的结论是，对于这里研究的样品，多孔硅中的电带隙具有分子性质，并且不能与元素硅的纳米晶体的量子限制性有关。 [S0163-1829（98）06336-x]。 [参考：17]

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