Dry etching to form submicron features in CMR oxides; (Pr,Ba,Ca)MnO_3 and (La,Sr)MnO_3

机译：干法蚀刻以在CMR氧化物中形成亚微米特征；（Pr，Ba，Ca）MnO_3和（La，Sr）MnO_3

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Effective pattern transfer into (Pr,Ba,Ca)MnO_3 and (La,Sr) MnO_3 has bee achieved using Cl_2/Ar discharges operated under Inbductively Coupled Plasma conditions. Etch rates up to 900 A min~-1 for (La,Sr)MnO_3 and 300 A min~-1 for (Pr,Ba,Ca)MnO_3 were obtained,with these rates being a strong function of ion flux, ion energy and ion-to-neutral ratio. The etching is still physically-dominated under al conditions, leading to significant surface smoothing on initially rough samples. Sub-micron(0.35 um m) features have been produced in both materials using SiN_x as the mask.

机译：使用在感应耦合等离子体条件下进行的Cl_2 / Ar放电，可以有效地将图案转移到（Pr，Ba，Ca）MnO_3和（La，Sr）MnO_3中。（La，Sr）MnO_3的刻蚀速率高达900 A min〜-1，（Pr，Ba，Ca）MnO_3的刻蚀速率高达300 A min〜-1，这些速率与离子通量，离子能量和离子与中性比。在所有条件下，蚀刻仍是物理上占主导地位的，从而导致最初的粗糙样品具有明显的表面平滑度。两种材料都使用SiN_x作为掩模生产了亚微米（0.35 um m）的特征。

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《Symposium on Multicomponent Oxide Films for Electronics held April 6-8,1999,San francisco,California,U.S.A.》|1999年|p.341-346|共6页
会议地点 San Francisco CA(US)
作者
K.P.Lee; K.B.Jung; H.Cho; D.Kumar; S.V.Pietambaram; R.K.Singh; P.H.Hogan; K.H.Dahmen; Y.B.Hahn; S.J.Pearton;
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中图分类无线电电子学、电信技术;
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Dry etching to form submicron features in CMR oxides; (Pr,Ba,Ca)MnO_3 and (La,Sr)MnO_3

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