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首页> 外文会议>Symposium on Multicomponent Oxide Films for Electronics held April 6-8,1999,San francisco,California,U.S.A. >Growth and microstructure of SrB_2Ta_2O_9 thin films
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Growth and microstructure of SrB_2Ta_2O_9 thin films

机译：SrB_2Ta_2O_9薄膜的生长和微观结构

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Single phase,(00l) oriented SrBi_2Ta_2O_9(SBT) thin films have been deposited on (100) MgO substrates using pulsed laser deposition (PLD) technique. In order to study the influence of the growth conditions on the microstructure and stoichiometry, SBT film growth was carried out under different deposition conditions, using an Kr:F excimer laser (248 nm, 30 ns FWHM). Effect of laser fluence (0/75-2 J/cm~2), frequency of the laser pulse (4-10 Hz), substrate temperature (700-850 deg C), oxygen partial pressure (150-450 mTorr) have been studied using X-ray diffraction (XRD), Scanning Electron Microscope (SEM), X-ray energy dispersive analysis (EDAX), atomic force microscopy (AFM). It was found that small variation in growth temperature and oxygen pressure has a large influence on the average grain size (50-180 nm) and surface roughness (0.14-0.3 nm) respctively. Outgrowths on the film surface were observed at high substrate temperatures, high laser energy and with higher frequencies (>6) of the laser pulse. Highly c-axis oriented SBT thin films with homogeneous surface morphology and with an average surface roughness of 0.14 nm were deposited at 750 deg C, 260 mTorr O_2 pressure and 1.25 J/cm~2 laser fluence. These films have a tangent loss around 0.05 and dielectric constant around 417 with a tunability of 4
机译：已使用脉冲激光沉积（PLD）技术在（100）MgO衬底上沉积了单相（00l）取向SrBi_2Ta_2O_9（SBT）薄膜。为了研究生长条件对显微组织和化学计量的影响，使用Kr：F准分子激光（248 nm，30 ns FWHM）在不同的沉积条件下进行SBT膜生长。激光通量（0 / 75-2 J / cm〜2），激光脉冲频率（4-10 Hz），基板温度（700-850摄氏度），氧气分压（150-450 mTorr）的影响使用X射线衍射（XRD），扫描电子显微镜（SEM），X射线能量色散分析（EDAX），原子力显微镜（AFM）进行了研究。发现生长温度和氧气压力的小变化分别对平均晶粒尺寸（50-180nm）和表面粗糙度（0.14-0.3nm）有很大的影响。在较高的基板温度，较高的激光能量和较高的激光脉冲频率（> 6）下观察到了膜表面上的产物。在750℃，260 mTorr O_2压力和1.25 J / cm〜2的激光通量下，沉积了具有均一的表面形态且平均表面粗糙度为0.14 nm的高c轴取向SBT薄膜。这些薄膜的切线损耗约为0.05，介电常数约为417，可调性为4

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