Investigation of growth Evolution in c-AXIS SrBi_2Nb_2O_9 epitaxial thin films

机译：c-AXIS SrBi_2Nb_2O_9外延薄膜的生长演化研究

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(001)-oriented epitaxial SrBi_2Nb_2O_9 thinf ilms have been grown by pulsed laser deposition on (001) LaAlO_3-Sr-2AlTaO_6 substrates at optimized growth condictions. 4-circle x-ray diffraction, Rutherford backscattering spectrometry, and transmission electron microscopy reveal highly oriented epitaxial films. Atomic force microscopy indicates spiral growth for films grown on SrTiO_3 and layer-by-layer growth for films grown on LaAlO_3-SrAlTaO_6.

机译：（001）取向的外延SrBi_2Nb_2O_9薄膜已经通过在优化生长条件下在（001）LaAlO_3-Sr-2AlTaO_6衬底上进行脉冲激光沉积而生长。 4圆X射线衍射，卢瑟福背散射光谱和透射电子显微镜显示高度取向的外延膜。原子力显微镜表明，在SrTiO_3上生长的膜呈螺旋形生长，而在LaAlO_3-SrAlTaO_6上生长的膜呈逐层生长。

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《Symposium on Multicomponent Oxide Films for Electronics held April 6-8,1999,San francisco,California,U.S.A.》|1999年|p.31-36|共6页
会议地点 San Francisco CA(US)
作者
J.Lettieri; M.A.Zubuchen; G.W.Brown; Y.Jia; W.Tian; X.Q.Pan; M.E.Hawley; D.G.Schlom;
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正文语种 eng
中图分类无线电电子学、电信技术;
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机译：在Pt外延底层上外延生长的SrBi_2Nb_2O_9薄膜：AFM铁电行为的结构特征和纳米表征
2. Investigation of the c-axis and basal plane anisotropy in epitaxial NdCo_5 thin films [J] . M. Seifert, L. Schultz, V. Neu Journal of Applied Physics . 2010,第9pta2期

机译：外延NdCo_5薄膜的c轴和基面各向异性研究
3. Epitaxial growth and thermoelectric properties of c-axis oriented Bi1-xPbxCuSeO single crystalline thin films [J] . Wu Xiaolin, Wang Jiang-Long, Zhang Hongrui, CrystEngComm . 2015,第45期

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4. Investigation of growth Evolution in c-AXIS SrBi_2Nb_2O_9 epitaxial thin films [C] . J.Lettieri, M.A.Zubuchen, G.W.Brown, Symposium on multicomponent oxide films for electronics . 1999

机译：C轴SRBI_2NB_2O_9外延薄膜生长演化研究
5. Evolution and regularity results for epitaxially strained thin films and material voids. [D] . Piovano, Paolo. 2012

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Investigation of growth Evolution in c-AXIS SrBi_2Nb_2O_9 epitaxial thin films

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