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首页> 外文会议>Symposium on New Applications for Wide-Bandgap Semiconductors; 20030422-20030424; San Francisco,CA; US >Optical and Electrical Characterization of Annealed Silicon-implanted GaN
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Optical and Electrical Characterization of Annealed Silicon-implanted GaN

机译：退火硅注入GaN的光电特性

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摘要

In this paper, we investigate the effect of post-implant annealing on the optical and electrical properties of Si-implanted GaN films. Results from several measurement techniques including room temperature photoluminescence (PL), micro-Raman scattering, high resolution X-ray diffraction (HRXRD) and Hall measurement are correlated to study the behavior of damage removal, dopant activation, crystalline quality and residual stress, etc. The Hall measurement demonstrates that reasonable activation percentage is achieved though there is only partial recovery of the PL intensity. Raman scattering shows the decrease of stress within the implanted films after thermal annealing. The carrier concentration increases monotonically with increasing annealing temperature up to 1100℃, which is in agreement with linewidth broadening of near band edge in PL spectrum. Moreover, systematic measurements implies that the implantation induced defects, especially point defects, which could play significant role in either the optical or electrical properties of films, cannot be completely annealed out at 1100℃.
机译：在本文中，我们研究了注入后退火对注入Si的GaN薄膜的光学和电学性质的影响。包括室温光致发光（PL），微拉曼散射，高分辨率X射线衍射（HRXRD）和霍尔测量在内的几种测量技术的结果相关联，以研究损伤去除，掺杂剂活化，晶体质量和残余应力等的行为。霍尔测量表明尽管PL强度仅部分恢复，但仍可实现合理的活化百分比。拉曼散射显示出在热退火之后植入的膜内的应力降低。载流子浓度随着退火温度的升高而升高，直至1100℃，这与PL谱中近带边缘的线宽变宽是一致的。此外，系统的测量表明，注入引起的缺陷，尤其是点缺陷，可能在薄膜的光学或电学性质中起重要作用，在1100℃不能完全退火。

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