Investigation of Thin Film Growth of B_(12)As_2 by Chemical Vapor Deposition

机译：化学气相沉积法研究B_（12）As_2的薄膜生长

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The chemical vapor deposition of icosahedral boron arsenide, B_(12)As_2, on 6H-SiC (0001) (on and off-axis) substrates was studied using hydrides as the reactants. The effects of temperature and reactant flow rates on the phases deposited and the crystal quality were determined. The growth rate increased with temperature from 1.5μm/h at 1100℃ to 5 μm/h at 1400℃ and decreased thereafter. X-ray diffraction revealed that the deposits were amorphous when the deposition temperature is below 1150?. Above 1150℃, smooth B_(12)As_2 films were formed on 6H-SiC substrates with an orientation of (0001) B_(12)As_2 parallel to 6H-SiC (0001). Raman spectroscopy confirmed the strongly c-axis oriented nature of B_(12)As_2 film on 6H-SiC.

机译：以氢化物为反应物，研究了六面体砷化硼B_（12）As_2在6H-SiC（0001）轴上和轴上的化学气相沉积。确定了温度和反应物流速对沉积相和晶体质量的影响。随着温度的升高，生长速率从1100℃的1.5μm/ h增加到1400℃的5μm/ h，然后降低。 X射线衍射表明，当沉积温度低于1150℃时，沉积物是非晶态的。在1150℃以上，在6H-SiC衬底上形成的B_（12）As_2平滑膜的取向为（0001）B_（12）As_2与6H-SiC（0001）平行。拉曼光谱证实了6H-SiC上B_（12）As_2膜的强c轴取向性质。

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《Symposium on New Applications for Wide-Bandgap Semiconductors; 20030422-20030424; San Francisco,CA; US》|2003年|P.283-287|共5页
会议地点 San Francisco CA(US);San Francisco CA(US)
作者
R.Nagarajan; J.H.Edgar; J.Pomeroy; M. Kuball; T.Aselage;
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Department of Chemical Engineering, Kansas State University, Manhattan, KS-66506, USA;

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正文语种 eng
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Investigation of Thin Film Growth of B_(12)As_2 by Chemical Vapor Deposition

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