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首页> 外文会议>Symposium on New Applications for Wide-Bandgap Semiconductors; 20030422-20030424; San Francisco,CA; US >Statistical Analysis of Micropipe Defect Distributions in Silicon Carbide Crystals
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Statistical Analysis of Micropipe Defect Distributions in Silicon Carbide Crystals

机译：碳化硅晶体中微管缺陷分布的统计分析

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摘要

The density and distribution of micropipes (MPD's), a screw dislocation with a hollow core, are significant criteria for SiC wafer selection in device fabrication. For this reason the measurement of micropipes in SiC is an important problem. The micropipe distributions of 2″ diameter 6H SiC wafers from three different PVT furnace designs in three different laboratories were statistically characterized. The micropipe distributions were measured in two ways: by KOH etching the wafer and then counting the hexagonal pits formed on the wafer surface using a microscope and imaging software; and by manually counting with an optical transmission microscope the micropipes on a un-etched wafer within a grid of 0.5mm squares superimposed over the wafer. None of the wafers had a random distribution of micropipes i.e. they did not follow a Poisson distribution. The micropipes were found to associate with each other i.e. there is a higher probability of there being other micropipes near a location where a micropipe has been found. In the eight samples characterized, 1.9% of the wafer area contained 32% of the total micropipes. We have analyzed the repeatability of the optical transmission microscopy method of micropipe characterization and found that it is dependent on the micropipe density; the standard deviation of the measurement increases with increasing MPD. The number of micropipes counted increases by about 10% with increasing magnification and 15% when the wafer is double side polished.
机译：微管（MPD）的密度和分布是空心空心的螺钉错位，是在器件制造中选择SiC晶片的重要标准。因此，SiC中微管的测量是一个重要的问题。对来自三个不同实验室的三个不同PVT炉设计的2英寸直径6H SiC晶片的微管分布进行了统计表征。通过以下两种方法测量微管分布：通过KOH蚀刻晶圆，然后使用显微镜和成像软件对在晶圆表面形成的六角形凹坑进行计数；通过用光学透射显微镜手动计数，将未腐蚀的晶片上的微管叠加在晶片上的0.5平方毫米的网格内。没有一个晶片具有微管的随机分布，即它们没有遵循泊松分布。发现微管彼此关联，即，在发现微管的位置附近存在其他微管的可能性更高。在表征的八个样品中，1.9％的晶圆面积包含总微管的32％。我们分析了微管表征的光学透射显微镜方法的可重复性，发现它与微管密度有关。测量的标准偏差随MPD的增加而增加。随着放大倍数的增加，计数的微管数量增加了约10％，而对晶片进行双面抛光时，微管的数量增加了15％。

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