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首页> 外文会议>Symposium on New Applications for Wide-Bandgap Semiconductors; 20030422-20030424; San Francisco,CA; US >Low Temperature Growth Mechanism of GaN Crystal by Hydride Vapor Phase Epitaxy
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Low Temperature Growth Mechanism of GaN Crystal by Hydride Vapor Phase Epitaxy

机译：氢化物气相外延法生长GaN晶体的低温机理

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摘要

The low temperature growth of GaN crystal using epitaxy lateral overgrowth (ELO) on SiO_2 dot pattern below 900℃ by hydride vapor phase epitaxy (HVPE) have been studied. It is observed that the growth rate of GaN hexagonal pyramidal crystals along [1101] direction increases as growth temperature decreases. At low temperature of ～ 850℃, hexagonal GaN columnar crystals with high index facet at the top can be observed. It is proposed that the surface diffusion length of precursors, such as NH_3 and GaCl, decreases at lower temperature that reduces the probability of desorption and increase the lifetime. The condensation of Ga liquid droplets on the GaN surface will change the relative stability of {1101} facet. Therefore, the formation of high index planes such as {1122} facet on the top of hexagonal column along with the formation of stacking fault on the (0001) plane can be observed. A detailed study of the effect of growth temperature on the crystal growth mechanism will be presented.
机译：利用氢化物气相外延（HVPE）研究了在900℃以下SiO_2点图形上利用外延横向过度生长（ELO）对GaN晶体的低温生长。观察到随着生长温度降低，沿[1101]方向的GaN六方锥晶体的生长速率增加。在〜850℃的低温下，可以观察到顶部具有高折射率面的六方氮化镓柱状晶体。建议在较低温度下降低前驱物（如NH_3和GaCl）的表面扩散长度，从而降低解吸的可能性并延长使用寿命。 Ga液滴在GaN表面上的凝结将改变{1101}晶面的相对稳定性。因此，可以观察到在六角柱的顶部形成诸如{1122}小平面的高折射率平面以及在（0001）平面上形成堆垛层错。将详细介绍生长温度对晶体生长机理的影响。

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