It is well known that the sharp, room temperature luminescence emission at 1.54 mu m from dislocated silicon has set off a great interest for this material in view of its applications in the third window of optical telecommunications. For this reason the dislocation related lumineascence ins silicon addressed recently a number of investigation aimed at understanding the mechanism of light emission. The problem is still unsolved as most of the experiments done gave contradictory answers to the main questions open, which concern the intrinsic or extrinsic nature of dislocation luminescence and the effect on it of reconstruction, interaction or passivation processes, possibly assisted by metallic or non-metallic impurities.
展开▼
