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首页> 外文会议>Symposium on Optical Microstructural Characterization of Semiconductors held November 29-30, 1999, Boston, Massachusetts, U.S.A. >Investigation of deep levels in GaP liquid phase epitaxial layers on substrates with vapor pressure heat treatement
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Investigation of deep levels in GaP liquid phase epitaxial layers on substrates with vapor pressure heat treatement

机译：用蒸气压热处理研究衬底上GaP液相外延层的深能级

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摘要

We fabricated GaP liquid phase epitaxial layers with temperature difference method under controlled vapor pressure (TDM-CVP), successively to GaP substrate annealing at growth temperautre (1133K) under various phosphorus vapor pressures around the optimum one (150 torr) for stoichiometric crystallization of GaP. Photocapacitance (PHCAP) and photoluminescence measurements have been carried out for characterizing GaP substrate crystals and the LPE layers and for revealing the mechanism of defect formation. Over one order of magnitude decrease of deep level densities in PHCAP has been observed after substrate crystals are annealed. Compared to the layers on substrates without heat treatment, similar tendency of deep level density deduction has been found in GaP LPE layers on heattreated substrates. In photoluminescence measurements, an obvious decrease of 700nm-band intensity from leat-treated substrates, as well as increases of green band intensities from GaP LPE layers on heat treated substrates, have been observed at 77K. Phosphorus interstitial is suggested to be possible related to the origin of deep level centers in the GaP substrate crystals. It is considered that during the process of heat treatment at growth temperature, under the optimum phosphorous pressure, the defects in GaP substrate crystals reach an equilibrium state, so that their diffusion to the growth layer decreases greatly.
机译：我们利用温差法在可控蒸气压（TDM-CVP）下制造了GaP液相外延层，随后在生长磷（1133K）和各种磷蒸气压附近最佳生长温度（150 torr）下对GaP衬底进行了退火，以实现GaP的化学计量结晶。 。已经进行了光电容（PHCAP）和光致发光测量，以表征GaP衬底晶体和LPE层并揭示缺陷形成的机理。衬底晶体退火后，观察到PHCAP的深能级密度降低了一个数量级。与未经热处理的基板上的层相比，在经过热处理的基板上的GaP LPE层中发现了类似的深度能级降低趋势。在光致发光测量中，已观察到在77K时，经浸渗处理的基材的700nm波段强度明显降低，以及来自GaP LPE层的绿带强度的​​升高。磷的间隙被认为可能与GaP衬底晶体中深能级中心的起源有关。据认为，在生长温度下的热处理过程中，在最佳磷压力下，GaP衬底晶体中的缺陷达到平衡状态，从而其向生长层的扩散大大减少。

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