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首页> 外文期刊>Journal of Electronic Materials >Nonstoichiometric Deep Levels in Mg-Doped GaP Epitaxial Layers: Effects of Pre-Annealing of Substrates
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Nonstoichiometric Deep Levels in Mg-Doped GaP Epitaxial Layers: Effects of Pre-Annealing of Substrates

机译:掺Mg的GaP外延层中的非化学计量深能级:衬底预退火的影响

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摘要

The effects of substrate pre-annealing on deep level density in Mg-doped GaP liquid-phase epitaxy (LPE) layers were investigated by photocapacitance measurement. With annealing under optimum phosphorus-vapor pressure, concentration of deep donor at E_C - 1.9-2.1 eV increased in undoped GaP substrate. Deep level densities in Mg-doped layers were also affected by presubstrates. Densities of dominant deep levels at E_V+0.85 eV and E_V + 1.5 eV were an order of magnitude reduced and, in contrast, the level at E_C - 2.1 eV is supposed to be involved with P-rich-type nonstoichiometric defects, such as phosphorus interstitial atoms diffused from the surface of the substrate.
机译:通过光电容测量研究了衬底预退火对掺Mg的GaP液相外延(LPE)层中深能级密度的影响。通过在最佳磷蒸气压力下进行退火,未掺杂的GaP衬底中E_C-1.9-2.1 eV处的深施主浓度增加。掺镁层的深能级密度也受到预衬底的影响。 E_V + 0.85 eV和E_V + 1.5 eV的主要深能级的密度降低了一个数量级,相反,E_C-2.1 eV的能级被认为与富P型非化学计量缺陷有关,例如磷间隙原子从基板表面扩散。

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