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首页> 外文会议>Symposium on Optical Microstructural Characterization of Semiconductors held November 29-30, 1999, Boston, Massachusetts, U.S.A. >Spectrally resolved cathodoluminescence determination of dopant diffusion in InP/InGaAsP based multti quantum well fabryy-perot lasers
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Spectrally resolved cathodoluminescence determination of dopant diffusion in InP/InGaAsP based multti quantum well fabryy-perot lasers

机译：基于InP / InGaAsP的多量子阱Fabry-perot激光器的光谱解析阴极发光测定掺杂剂扩散

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摘要

Low temperature monochromatic cathodoluminescence (CL) spectral analyses and imaging were used to determined the widths of resistive regions (due to Fe diffusion) in multi-quantum-well (MQW) InP-based laser devices and to detect the different amount of damage induced by alternative In-situ Etching (ISE) and Reactive IOn Etching (RIE) techniques. The widths of the resistive regions were estimated by comparing the 5 K CL emission width from the MQW and the actual width as obtained by SEM investigations. Monochromatic CL also did not reveal any emission from the INP:Sn layer between semi-insulating material (Fe-doped InP) and p-type layer (Zn-doped InP), incidcating interdiffusion of Fe and Zn laterally the MQW, and the presence of substantial Sn diffusion (up to 2500 nanometers) into the substrate.
机译：低温单色阴极发光（CL）光谱分析和成像用于确定基于多量子阱（MQW）InP的激光器件中电阻区的宽度（由于Fe扩散），并检测由NP引起的不同程度的损伤替代性原位蚀刻（ISE）和反应性离子蚀刻（RIE）技术。通过比较MQW的5 K CL发射宽度和通过SEM研究获得的实际宽度，可以估算出电阻区域的宽度。单色CL也没有显示出半绝缘材料（Fe掺杂的InP）和p型层（Zn掺杂的InP）之间的INP：Sn层的任何发射，从而阻止了Fe和Zn在MQW的横向相互扩散大量的锡扩散（最大2500纳米）到基板中。

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