GaSb p-n junctions formed by Zn diffusion in Te-doped n-GaSb single crystalline wafers have been characterized by cathodoluminesence (CL) microscopy and by canning tunneling spectroscopy. CL plane-view observations of the Zn diffused side enable to study the homogeneity of the diffusion treatment. Spectra recorded by current imaging tunneling spectroscopy (CITS) in the n and p sides of the junction, clearly show the respective conductive behaviour and provide information on the local surface band gaps. Results are related to the diffusion profile measured by secondary ion mass spectrometry (SIMS).
展开▼
