Raman spectra were measured on arsenic-implanted silicon with micro-Raman spectroscopy in the backsattering mode and with macro-Raman spectroscopy. A peak is observed between 505 and 510 cm~(-1) with 488 and 514.5 nm excitation. This peak and a related peak from the substrate at about 520 cm~(-1) are seen in selected regions of the implanted samples when the implant dose is above 2x10~(14) As/cm~2. These features may be due to a long room temperature anneal, as they are absent in recently prepared samples. Possible explanations for the features are presented.
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