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首页> 外文会议>Symposium on Optical Microstructural Characterization of Semiconductors held November 29-30, 1999, Boston, Massachusetts, U.S.A. >Photo-indouced current spectroscopy in undoped CVD diamond films
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Photo-indouced current spectroscopy in undoped CVD diamond films

机译：未掺杂的CVD金刚石膜中的光倍电流谱

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摘要

Combined TSC and PICTS measurements have been used to determine the activation energies (E_t) and capture cross-scetions ( sigma ) of the trap levels inside the bandgap of CVD diamond in the energy range 0.4-0.7 eV. High temperature TSC analysis has been performed to determine the trap parameters in the energy range from 0.9 to 1.3 eV. A fieldmap in the determine the trap parameters in the energy range from 0.9 to 1.3 eV. A fieldmap in the E_1- sigma plane has been obtained from the combination of the TSC and PICTS data depicting the regons corresponding to two isolated trap levels and to a continuous distribution of states. The coocentrations of defects have been calculated from the TSC signals and the measurement of the charge collection efficiency of the diamond samples.
机译：TSC和PICTS的组合测量已用于确定激活能量（E_t）并捕获能量范围为0.4-0.7 eV的CVD金刚石带隙内陷阱能级的横切面（sigma）。已经进行了高温TSC分析，以确定在0.9至1.3 eV能量范围内的陷阱参数。确定能量参数在0.9到1.3 eV之间的陷阱参数的场图。从TSC和PICTS数据的组合中获得了E_1-sigma平面中的场图，该数据描述了对应于两个孤立陷阱能级和状态连续分布的区域。从TSC信号和钻石样品电荷收集效率的测量值计算出缺陷的共浓度。

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