Semiconducting SiC is expected for power devices and higher breakdown voltage of the device is required. Growth rate of epilayer by conventional CVD is about 3 mu m/h. To make a thick epilayer, more that 10 hours are needed. To minimze the growth time, we propose sublimation epitaxial method by close space technique (CST). In the CST, source (polycrystalline 3C-SiC plate) and substrate is closely separatedf by spacer and source material is sublimed and transferred to the substrate in argon. Epitaxial layers with specular suface were obtaiined on 6H-SiC substrates at a substrate temperature around 2200 deg C and growth rate was about 100 mu /h. Nitrogen-bound exciton was observed by PL measurement at 2K in the epilayer w hen 3C-SiC plate with high purity was employsed as the source material. Crystallinity o f the epilayer was characterized by Raman spectroscopy.
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