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首页> 外文会议>Symposium on Power Semiconductor Materials and Devices December 1-4, 1997, Boston, Massachusetts, U.S.A. >Heteroepitaxy and high density nucleation of diamond on mirro-polished silicon
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Heteroepitaxy and high density nucleation of diamond on mirro-polished silicon

机译：镜面抛光硅上金刚石的异质外延和高密度成核

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摘要

By virture of its excellent electronic properties, diamond may become an important material for high temperature, high speed, high power and high compact electronic devies. However, most of these devices, single crystal or epitaxial films are required. Thus, for obvious reason, large-area heteroepitaxial diamond films are desired. Silicon is the most imortant material severed as a substrate for diamond heteroepitaxy. However, diamond can hardly be grown on mirror-polished Si, with nucleation density being only about 10~4 cm~(-2). although scratching si substrate could enhance greatly the nucleation density, it destroyed seriously the peridoc structure of the Si surface. Thus damond film grown on such a substrate will be randomly oriented polycrystallites. In order to overcome this difficulty, several methods have been developed, including (1) bias ehanced ncleation; (2) electron emission enhanced nucleation; (3) nucleation enhanced byslight surface modification; and (4) very low pressure (0.1 torr) nucleation. We will introduce the second, third, and fourth methods, which were developed in our laboratory recnetly. Special attention will be paid to the relation between heteroeptiaxy and high density nucleation. The incubation time for diamond nucleation is a citical parameter for high density nucleation and heteroepitaxy.
机译：凭借其出色的电子性能，钻石可能成为高温，高速，高功率和高紧凑型电子设备的重要材料。但是，大多数这些器件都需要单晶或外延膜。因此，出于明显的原因，需要大面积异质外延金刚石膜。硅是最难分解的材料，可作为金刚石异质外延的基质。然而，金刚石几乎不能在镜面抛光的Si上生长，其成核密度仅为10〜4 cm〜（-2）。尽管刮擦硅衬底可以大大提高成核密度，但它严重破坏了硅表面的周长结构。因此，在这样的基底上生长的damond膜将是随机取向的多晶。为了克服这个困难，已经开发了几种方法，包括（1）偏向增强成核； （2）电子发射增强成核； （3）通过轻微的表面改性增强形核； （4）极低的压力（0.1 torr）成核。我们将介绍第二种，第三种和第四种方法，它们是在我们的实验室中开发出来的。将特别注意异表异位与高密度成核之间的关系。金刚石成核的潜伏时间是高密度成核和异质外延的关键参数。

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