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首页> 外文会议>Symposium on Progress in Semiconductors Ⅱ―Electronic and Optoelectronic Applications Dec 2-5, 2002 Boston, Massachusetts, U.S.A. >Epitaxial Praseodymium Oxide: A New High-K Dielectric
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Epitaxial Praseodymium Oxide: A New High-K Dielectric

机译：外延氧化ody：新型的高介电常数

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摘要

We show results for molecular beam epitaxial (MBE) growth of praseodymium oxide on Si. On Si(100) oriented surfaces, crystalline Pr_2O_3 grows as (100)-domains, with two orthogonal in-plane orientations. Epitaxial overgrowth with Si could not been realized so far. We obtain perfect epitaxial growth of hexagonal Pr_2O_3 on Si(111). These layers can also be overgrown epitaxially with Si leading to novel tunnel structure's. Crystalline Pr_2O_3 on Si(001) is a promising candidate for highly scaled gate insulators, displaying sufficiently high-K value of around 30, ultra-low leakage current density, good reliability, and high electrical breakdown voltage. The Pr_2O_3/Si(001) interface exhibits the symmetric band alignment, desired for applying such material in both n- and p-type devices. The valence band as well as the conduction band offset to Si is above 1 eV. The electron masses can be assumed to be very heavy in the oxide. This effect together with the suitable band offsets leads to the unusually low leakage currents found experimentally. Finally, the integration of crystalline Pr_2O_3 high-K gate dielectrics into a conventional CMOS process will be demonstrated.
机译：我们显示了Si上Si分子束外延（MBE）生长的结果。在Si（100）取向的表面上，晶体Pr_2O_3作为（100）域生长，具有两个正交的面内取向。到目前为止，Si还没有实现外延生长。我们在Si（111）上获得六角形Pr_2O_3的完美外延生长。这些层也可以外延生长硅，从而形成新颖的隧道结构。 Si（001）上的Pr_2O_3晶体是大规模栅绝缘体的有希望的候选者，它具有足够高的K值（大约30），超低的漏电流密度，良好的可靠性和高的击穿电压。 Pr_2O_3 / Si（001）界面展现出对称的能带对准，这是在n型和p型器件中应用此类材料所需要的。价带以及与Si的导带偏移均大于1 eV。可以认为电子质量在氧化物中非常重。这种影响与合适的带偏移一起导致实验中发现异常低的泄漏电流。最后，将说明晶体Pr_2O_3高K栅极电介质到常规CMOS工艺中的集成。

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