首页> 外文会议>Symposium on Quantum Confined Semiconductor Nanostructures Dec 2-5, 2002 Boston, Massachusetts, U.S.A. >SPECTROSCOPIC STUDY OF RARE EARTH DOPED NANO-CRYSTALLINE SILICON IN SiO_22 FILMS
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SPECTROSCOPIC STUDY OF RARE EARTH DOPED NANO-CRYSTALLINE SILICON IN SiO_22 FILMS

机译:SiO_22薄膜中稀土掺杂纳米晶硅的光谱学研究

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摘要

Si-rich SiO_2, Nd-doped Si-rich SiO_2 and Nd-doped SiO_2 thin films were prepared. Photoluminescence (PL) spectra for visible and infrared were obtained for each as-deposited film. The samples were annealed by steps to different temperatures within the range 600℃-1100℃ for 30 minutes at each annealing temperature. PL spectra were obtained at each step and their characteristics were studied. The best annealing temperature for the PL of the rare earth (RE) ions was obtained. The PL spectra of the films were compared with one another. Energy transfer from the silicon nanocrystals (Si nc) to the RE ions is verified using excitation wavelength and excitation power spectra.
机译:制备了富硅SiO_2,掺Nd的富硅SiO_2和掺Nd的SiO_2薄膜。对于每个沉积膜,获得可见光和红外光的光致发光(PL)光谱。在每个退火温度下,将样品分步退火至600℃-1100℃范围内的不同温度30分钟。在每个步骤获得PL光谱,并研究其特性。获得了稀土(RE)离子PL的最佳退火温度。将膜的PL光谱相互比较。使用激发波长和激发功率谱验证了从硅纳米晶体(Si nc)到RE离子的能量转移。

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