首页> 外文会议>Symposium on Quasicrystals held November 30-December 2,1998,Boston,Massachusetts,U.S.A. >Selective growth of decagonal Al-Co thin films by reactive diffusion: kinetic and thermodynamci aspects
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Selective growth of decagonal Al-Co thin films by reactive diffusion: kinetic and thermodynamci aspects

机译:通过反应扩散选择性生长十边形Al-Co薄膜:动力学和热力学方面

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摘要

We report on the formation by reactive diffusion of a pure decagonal quasicrystalline film in Al/Co bilayer and multiplayer structures of overall ocmposijtion Al_13Co_4.We show that this mehtod is highly selective since several stable phases which exist around this ocmposition are never observed.the quasicrystal is not the first reaction product but is obtained as a second reaction step by a peritectoid reaction between Al_9Co_2 and the remaining cobalt.DSC analysis allows the determination of both the enthalpy of formaitn of the decagonal quasicrystal (#DELTA#H_f=-31500+-2000 J/g-atom) and its activation energy of growth (2.6 +- 0.5 eV).
机译:我们报道了通过纯正十边形准晶体膜在Al / Co双层中的反应扩散形成的结构以及总体O_posposijtion Al_13Co_4的多层结构。并不是第一反应产物,而是通过Al_9Co_2与剩余钴之间的类百维反应在第二反应步骤中获得的。DSC分析可以确定十边形准晶体的形式焓(#DELTA#H_f = -31500 +- 2000 J / g原子)及其生长的活化能(2.6 +-0.5 eV)。

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