• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Symposium on Recent Advances in Catalytic Materials December 2-4, 1997, Boston, Massachusetts, U.S.A. >Humidity effects on the electrical properties of epitaxial rutile thin films
【24h】

Humidity effects on the electrical properties of epitaxial rutile thin films

机译：湿度对金红石外延薄膜电性能的影响

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Thin films of (001) and (100) oriented rutile phase TiO_2, undoped or doped with Ga or Nb, have been grown using the MOCVD technique on sapphire substrates for use in studies of the effects of humidity on the electrical properties of rutile. The crystallographic and microstructural quality of the films decreases with increasing Ga and Nb concentrations. Heteroepitaxy is, however, maintained with Ga or Nb concentrations up to 4.5 atpercent for the (001) orientation and to 0.5 atpercent Ga for the (100) orientation. The electrical properties of the (001) oriented rutile films have been characterized from room temperature to 225 deg C in dry and humid, N_2 and air atmospheres. At constant temperature in dry atmospheres, the conductance of the Nb-doped rutile films is greater than that of the undoped, which is greater than the conductance of the Ga-doped films. The activation energies for conduction in the Nb-doped and undoped rutile films in dry atmospheres are similar (approx0.1 eV), whereas the activation energy in Ga-doped films is much greater (approx0.8 eV). The effects of humidity in reducing the resistance of rutile is greatest in the Gadoped and very thin (approx150 A) undoped films. Humidity is observed to have similar effects on both the (001) and (100) oriented 0.5 atpercent Ga-doped films.
机译：未掺杂或掺杂有Ga或Nb的（001）和（100）取向金红石相TiO_2薄膜已使用MOCVD技术在蓝宝石衬底上生长，用于研究湿度对金红石电性能的影响。薄膜的晶体学和微观结构质量随Ga和Nb浓度的增加而降低。然而，对于（001）取向，Ga或Nb的浓度最高可达4.5％，对于（100）取向，Ga或Nb的浓度最高可达0.5％。 （001）取向的金红石薄膜的电性能已经在干燥和潮湿，N_2和空气气氛中从室温到225摄氏度进行了表征。在干燥气氛中在恒定温度下，掺杂Nb的金红石薄膜的电导大于未掺杂的，这大于掺杂Ga的薄膜的电导。在干燥气氛中，掺Nb和不掺金红石薄膜中的传导活化能相似（约0.1 eV），而掺Ga薄膜中的活化能大得多（约0.8 eV）。湿度降低了金红石型和极薄（约150 A）的未掺杂薄膜的影响最大。观察到湿度对0.5％Ga掺杂的（001）和（100）取向的薄膜都有相似的影响。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号