Laser-induced formation of visible light emitting silicon

机译：激光诱导形成可见光发射硅

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Light emitting silicon has been prepared by Ar laser (514.5 nm) induced stain etching and Nd:YAG impulse (532 nm) laser irradiation in air. Photoluminescence (PL), IR and XPS spectra have been studied. The intensity and position of the PL depend on the power and the duration of laser beam treatment during the etching. Correlation between the PL and chemical bonding is discussed.

机译：发光硅已经通过Ar激光（514.5 nm）诱导的污点蚀刻和Nd：YAG脉冲（532 nm）激光在空气中辐照制备。已经研究了光致发光（PL），IR和XPS光谱。 PL的强度和位置取决于蚀刻过程中激光束处理的功率和持续时间。讨论了PL和化学键之间的相关性。

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《Symposium F: Third International Conference on Laser Ablation (Cola'95) of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》|1995年|p.457-462|共6页
会议地点 Strasbourg(FR);Strasbourg(FR)
作者
D.Dimova-Malinovska; M.Tzolov; N.Malinowski; Ts.Marinova; V.Krastev;
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原文格式 PDF
正文语种 eng
中图分类一般工业技术;
关键词
porous silicon; photoluminescence; laser induced etching;

机译：多孔硅光致发光激光蚀刻;

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2. Visible light-emitting hydrogenated nanocrystalline silicon-on-insulator films: Formation and properties [J] . Tyschenko I.E., Volodin V.A. Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2011,第Null期

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3. Bismuth doping of silicon compatible thin films for telecommunications and visible light emitting devices [J] . Scarangella Adriana, Reitano Riccardo, Priolo Francesco, Materials science in semiconductor processing . 2019,第期

机译：硅兼容薄膜的铋掺杂电信和可见光发光器件
4. Laser-induced formation of visible light emitting silicon [C] . D.Dimova-Malinovska, M.Tzolov, N.Malinowski, Symposium F: international conference on laser ablation . 1996

机译：激光诱导的可见光发光硅的形成
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7. Visible light-emitting hydrogenated nanocrystalline silicon-on-insulator films: formation and properties [O] . Ida E. Tyschenko, Vladimir A. Volodin 2015

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Laser-induced formation of visible light emitting silicon

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