MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes

机译：AlGaInN多量子阱异质结构和激光二极管的MOCVD生长和表征

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We demonstrate room temperature, pulsed, current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple quantum well devices were grown by organo-metallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were approx 400 nm. The lowest threshold current density obtained was 6 kA cm~(-2) with maximum output powers of 50 mW per facet. Optically-pumped distributed-feedback laser operation was also achieved.

机译：我们演示了InGaAlN异质结构激光二极管的室温，脉冲，电流注入操作，该二极管具有通过化学辅助离子束蚀刻制成的反射镜。通过有机金属气相外延在c面蓝宝石衬底上生长多量子阱器件。增益引导激光二极管的发射波长约为400 nm。获得的最低阈值电流密度为6 kA cm〜（-2），每面最大输出功率为50 mW。还实现了光学泵浦分布式反馈激光操作。

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《Symposiuml on Nitrides and Related Wide Band Gap Materials of the E-MRS 1998 Spring Conference, Strasbourg, France,16-19 June 1998》|1998年|P.33-38|共6页
会议地点 Strasbourg(FR)
作者
D.P.Bour; M.Kneissl; D.Hofstetter; L.T.Romano; M.McCluskey; C.G.Van de Walle; B.S.Krusor; C.Dunnrowicz; R.Donaldson; J.Walker; N.M.Johnson;
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正文语种 eng
中图分类无线电电子学、电信技术;
关键词
Semiconductor lasers; CVD; Nitrides; Epitaxial deposition; Quantum well semiconductor epitaxial layers; Quantum well lasers; Semiconductor heterojunctions;

机译：半导体激光器； CVD;氮化物;外延沉积；量子阱半导体外延层；量子阱激光器；半导体异质结;

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专利

1. 1.5 mu m GaInAs/GaInAsP graded index separate confinement heterostructure multiple quantum well (GRIN-SCH-MQW) laser diodes grown by metalorganic chemical vapour deposition (MOCVD) [J] . Kasukawa A., Murgatroyd I.J. Electronics Letters . 1989,第10期

机译：通过金属有机化学气相沉积（MOCVD）生长的1.5μm的GaInAs / GaInAsP梯度折射率分离禁区异质结构多量子阱（GRIN-SCH-MQW）激光二极管
2. MOCVD growth of strained multiple quantum well structure for 1.3μ m InAsP/InP laser diodes [J] . Chong-Yi Lee, Meng-Chyi Wu, hung-Pin Shiao Solid-State Electronics . 1999,第12期

机译：1.3μmInAsP / InP激光二极管的应变多量子阱结构的MOCVD生长
3. 1.3 mu m GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well (BH-GRIN-SC-MQW) lasers entirely grown by metalorganic chemical vapour deposition (MOCVD) [J] . Kasukawa A., Imajo Y. Electronics Letters . 1989,第2期

机译：通过金属有机化学气相沉积（MOCVD）完全生长的1.3μm GaInAsP / InP掩埋异质结构渐变折射率分离禁区多量子阱（BH-GRIN-SC-MQW）激光器
4. MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes [C] . D.P.Bour, M.Kneissl, D.Hofstetter, Symposium L on nitrides and related wide band gap materials of the E-MRS conference . 1999

机译：MOCVD多量子阱异质结构和激光二极管的MOCVD生长和表征
5. MOCVD Growth and Characterization of Nonpolar and Semipolar Gallium Nitride-based Green Laser Diodes [D] . Lin, You-Da. 2010

机译：MOCVD生长和非极性和半极性氮化镓基绿色激光二极管的表征
6. Improving Output Power of InGaN Laser Diode Using Asymmetric In0.15Ga0.85N/In0.02Ga0.98N Multiple Quantum Wells [O] . Wenjie Wang, Wuze Xie, Zejia Deng, 2019

机译：使用非对称In0.15Ga0.85N / In0.02Ga0.98N多量子阱提高InGaN激光二极管的输出功率
7. MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes [O] . D. P. Bour, M. Kneissl, D. Hofstetter, 2012

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8. MOCVD-Grown InGaAsP Double Heterostructure Diode Lasers. [R] . Razeghi, M. 1993

机译：mOCVD生长的InGaasp双异质结构二极管激光器。

MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes

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