Effects of Annealing on Structural and Optical Properties of ZnO Nanowires

机译：退火对ZnO纳米线结构和光学性能的影响

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We report, for the first time, effects of annealing of ZnO NWs grown on p-Si substrates. ZnO NWs are grown using metalorganic chemical vapor deposition (MOCVD) and thermal annealing was performed in situ under nitrogen ambient at different stages of the growth process. Increasing the annealing temperature of the ZnO seed epi-layer from 635 ℃ to 800 ℃ does not affect the morphology of the grown NWs. In contrast, annealing the NWs themselves at 800 ℃ results in a 48% decrease of the surface area to volume ratio of the grown NWs. The optical quality can be improved by annealing the seed layer at a higher temperature of 800 ℃, although annealing the NWs themselves does not affect the defect density.

机译：我们首次报告了在p-Si衬底上生长的ZnO NW退火的影响。使用金属有机化学气相沉积（MOCVD）生长ZnO NW，并在生长过程的不同阶段在氮气环境下原位进行热退火。 ZnO种子外延层的退火温度从635℃提高到800℃不会影响生长的NW的形貌。相反，在800℃下对NW本身进行退火会使生长的NW的表面积与体积之比减少48％。尽管在NWs本身不影响缺陷密度，但在800℃的较高温度下对晶种层进行退火可以改善光学质量。

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《Synthesis, characterization, and applications of functional materials - thin films and nanostructures》|2014年|21-25|共5页
会议地点 San Francisco CA(US)
作者
Anas Mazady; Abdiel Rivera; Mehdi Anwar;
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Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269;

Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269;

Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269;

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Effects of Annealing on Structural and Optical Properties of ZnO Nanowires

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