Morphological Stability in Molecular Beam Epitaxial Growth

机译：分子束外延生长的形态稳定性

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

Molecular beam epitaxy has already been treated in other Lectures of this School. Other Lecturers have also already considered instabilities of growth processes. Indeed, growth processes are so full of instabilities that the theorist often wonders how crystals can be grown at all! I will address here a number of situations where instabilities appear, both for homoepitaxial (growth of element A on A) and heteroepitaxial (growth of B on A) deposition.

机译：分子束外延已经在该学校的其他讲座中进行了介绍。其他讲师也已经考虑了增长过程的不稳定性。实际上，生长过程充满了不稳定性，以至于理论家经常想知道如何才能生长晶体！在这里，我将介绍许多出现不稳定性的情况，包括同质外延（A上元素A的增长）和异质外延（B上A元素B的增长）的不稳定性。

著录项

来源
《Theoretical and technological aspects of crystal growth》|1998年|223-240|共18页
会议地点 Rimini(IT);Rimini(IT)
作者
A. Pimpinelli;
展开▼
作者单位

LASMEA, Universite Blaise Pascal, Clermont-Ferrand, France;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类晶体生长;
关键词
MBE; morphological stability; surface morphology; adsorption; desorption; growth steps; kink; growth rate;

机译：MBE;形态稳定性表面形态吸附解吸生长步骤；纠结;增长率;

相似文献

外文文献
中文文献
专利

1. Impact of growth parameters on the morphology and microstructure of epitaxial GaAs nanowires grown by molecular beam epitaxy [J] . Z.Y. Lu, P.P. Chen, Z.M. Liao Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2013,第Null期

机译：生长参数对分子束外延生长外延GaAs纳米线的形貌和微观结构的影响
2. Radio frequency-molecular beam epitaxial growth of InN epitaxial films on (0001)sapphire and their properties [J] . Araki T, Saito Y, Yamaguchi T, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2004,第4期

机译：（0001）蓝宝石上InN外延膜的射频-分子束外延生长及其性能
3. Epitaxial growth on gas cluster ion-beam processed GaSb substrates using molecular-beam epitaxy [J] . Krishnaswami K, Vangala SR, Zhu B, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2004,第3期

机译：使用分子束外延在气体团簇离子束处理的GaSb衬底上外延生长
4. Morphological Stability in Molecular Beam Epitaxial Growth [C] . International school on crystal growth . 1998

机译：分子束外延生长的形态稳定性
5. Molecular Beam Epitaxial Growth of Monocrystalline MgxCd1-xTe/MgyCd1-yTe (x [D] . Campbell, Calli Michele 2019

机译：单晶MgxCd1-xTe / MgyCd1-yTe（x的分子束外延生长
6. In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy [O] . Zheng Zuo, Zhongguang Xu, Renjing Zheng, -1

机译：分子束外延法原位外延生长石墨烯/ h-BN范德华异质结构
7. Growth kinetics and modeling of selective molecular beam epitaxial growth of GaAs ridge quantum wires on pre-patterned nonplanar substrates [O] . Sato, Taketomo, Tamai, Isao, Hasegawa, Hideki 2004

机译：预构图非平面衬底上GaAs脊量子线的选择性分子束外延生长的生长动力学和建模
8. Implications of the Configuration-Dependent Reactive Incorporation Growth Process for the Group V Pressure and Substrate Temperature Dependence of III-V Molecular Beam Epitaxial Growth and the Dynamics of the Reflection High-Energ [R] . Madhukar, A., Ghaisas, S. V. 1985

机译：配置相关的反应结合生长过程对III-V分子束外延生长的第V族压力和基板温度依赖性以及反射高能量动力学的影响

Morphological Stability in Molecular Beam Epitaxial Growth

摘要

著录项

相似文献

相关主题

期刊订阅