Applicability of Raman scattering for the characterization of nanocrystalline silicon

机译：拉曼散射在纳米晶硅表征中的适用性

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It is shown that Raman scattering alone cannot provide unambiguous information regarding the crystallite size, its distribution and crystalline fraction in nc-/a-Si films unless additional data regarding the structure of the films are obtained by other techniques. direct c 1999 Elsevier Science S.A. All rights reserved.

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来源
《Thin film materials for large area electronics》|1998年|p.148-151|共4页
会议地点 Strasbourg(FR)
作者
Ch.Ossadnik; S.Veprek; I.Gregora;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
Raman sattering; Nanocrystalline silicon;

机译：拉曼散射；纳米晶硅;

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3. RAMAN SCATTERING STUDY OF HYDROGEN-TERMINATED PHOTOLUMINESCENT NANOCRYSTALLINE POROUS SILICON [J] . Phan Hong Khoi, Ngo Thi Thanh Tam, Dao Duc Khang, Advances in Natural Sciences . 2001,第4期

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4. Applicability of Raman scattering for the characterization of nanocrystalline silicon [C] . Ch. Ossadnik, S. Veprek, I. Gregora Symposium E on thin film materials for large area electronics of the E-MRS 1998 spring conference . 1999

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Applicability of Raman scattering for the characterization of nanocrystalline silicon

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