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High quality, relaxed SiGe epitaxial layers for solar cell application

机译：用于太阳能电池的高质量，松弛的SiGe外延层

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Epitaxially grown, relaxed Si_1-xGe_x layers with x<=0.1 were grown on a Si (100) substrate by means of reduced pressure chemical vapor deposition at a temperature of 750 or 800 deg C. The analysis carried out on the grown layers revealed a very high material quality indicated by the low density of dislocations (10~5 cm~-2) and the high diffusion length which was deduced from the measurements of electron beam induced current (EBIC) performed on the as-grown layers. Transmission electron microscopy (TEM) measurements showed that the threading dislocation segmetns do not extend inside the layer but are rather confined to the Si/SiGe interface, which results in a low density of dislocations in the material. The processed solar cells made from these SiGe layers showed a higher infrared response than those made of a corresponding Si grown and processed under similar conditions. No degradation of the solar cell performance caused by the dislocations in the SiGe layers has been observed. direct c 1999 Elsevier Science S.A. All rights reserved.
机译：通过在750或800摄氏度的温度下通过减压化学气相沉积在Si（100）衬底上生长具有x <= 0.1的外延生长的，松弛的Si_1-xGe_x层。在生长的层上进行的分析表明：由位错密度低（10〜5 cm〜-2）和高扩散长度表示的非常高的材料质量，这是通过对生长层进行电子束感应电流（EBIC）的测量得出的。透射电子显微镜（TEM）测量表明，螺纹位错隔离区不在层内延伸，而是局限于Si / SiGe界面，这导致材料中的位错密度低。由这些SiGe层制成的已加工太阳能电池显示出比由在相似条件下生长和加工的相应Si制成的太阳能电池更高的红外响应。没有观察到由于SiGe层中的位错引起的太阳能电池性能的降低。直接c 1999 Elsevier Science S.A.保留所有权利。

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