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Properties of polycrystalline silicon films prepared from fluorinated precursors

机译：由氟化前体制备的多晶硅薄膜的性能

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Polycrystalline silicon films have been prepared at low temperature on glass substrate from fluorinated precursors by PECVD technique varying the hydrogen dilution and gas flow rate. Undoped film with dark-conductivity 1.05 X 10 ~-2 S cm~-1 has been obtained. For n-type poly-Si film the highest conductivity achieved is 2.8 S cm~-1. Grain size observed from SEM varies from 4 to 6 #mu#m for undoped and 2 to 3 #mu#m for phosphorous doped films. The main crystalline peak is <111> whereas the crystallite size calculated from XRD is 350 A. The optical absorptions and hydrogen contents in the films deposited under different conditions have been studied. Growth kinetics are dominated by the precursors SiF_nF_m (m+n<=3) and concentrations of F and H on the growth surface. direct c 1999 Elsevier Science S.A. All rights reserved.
机译：通过改变氢稀释度和气体流速，通过PECVD技术在低温下在玻璃基板上由氟化前体制备了多晶硅膜。获得了具有暗导电性1.05 X 10〜-2 S cm〜-1的未掺杂薄膜。对于n型多晶硅膜，获得的最高导电率是2.8 S cm〜-1。从SEM观察到的晶粒尺寸在未掺杂的情况下为4至6μμm，对于磷掺杂的薄膜为2至3＃μm。主晶体峰为<111>，而根据XRD计算的微晶尺寸为350A。已经研究了在不同条件下沉积的膜中的光吸收和氢含量。生长动力学由前体SiF_nF_m（m + n <= 3）和生长表面上F和H的浓度决定。直接c 1999 Elsevier Science S.A.保留所有权利。

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