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首页> 外文期刊>International Journal of Photoenergy >Structural and Electrical Properties of Polysilicon Films Prepared by AIC Process for a Polycrystalline Silicon Solar Cell Seed Layer
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Structural and Electrical Properties of Polysilicon Films Prepared by AIC Process for a Polycrystalline Silicon Solar Cell Seed Layer

机译：AIC工艺制备的多晶硅太阳能电池种子层多晶硅膜的结构和电性能

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摘要

Polycrystalline silicon (pc-Si) films are produced by aluminum-induced crystallization (AIC) process for a polycrystalline silicon solar cell seed layer, and the structural and electrical properties of the films are analyzed. The used structure is glass/Al/ Al_2O_3/a-Si, and the thickness of Al_2O_3 layer was varied from 2 nm to 20 nm to investigate the influence of the Al_2O_3 layer thickness on the formation of the polycrystalline silicon. The annealing temperature and annealing time were fixed to 400℃ and 5 hours, respectively, for the AIC process conditions. As a result, it is observed that the average grain size of the pc-Si films is rapidly smaller with increasing the thickness of Al_2O_3 layer, whereas the film quality, as defects and Hall mobility, was gradually degraded with only small difference. We obtained the maximum average grain size of 15 μm for the pc-Si film with the thickness of Al_2O_3 layer of 4 nm. The best resistivity and the Hall mobility was 6.1 × 10~(-2) Ω · cm and 90.91 cm~2/Vs, respectively, in the case of 8 nm thick Al oxide layer.
机译：通过铝诱导结晶（AIC）工艺生产多晶硅太阳能电池种子层的多晶硅（pc-Si）薄膜，并分析了薄膜的结构和电性能。使用的结构为玻璃/ Al / Al_2O_3 / a-Si，Al_2O_3层的厚度在2 nm至20 nm之间变化，以研究Al_2O_3层厚度对多晶硅形成的影响。对于AIC工艺条件，退火温度和退火时间分别固定为400℃和5小时。结果，观察到，随着Al_2O_3层的厚度增加，pc-Si膜的平均晶粒尺寸迅速变小，而作为缺陷和霍尔迁移率的膜质量仅以很小的差异逐渐劣化。对于Al_2O_3层厚度为4 nm的pc-Si膜，我们获得的最大平均晶粒尺寸为15μm。在8 nm厚的Al氧化物层的情况下，最佳电阻率和霍尔迁移率分别为6.1×10〜（-2）Ω·cm和90.91 cm〜2 / Vs。

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