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Surface melt dynamics and super lateral growth regime in long pulse duration excimer laser crystallization of amorphous Si films

机译：非晶硅膜的长脉冲准分子激光结晶中的表面熔体动力学和超横向生长机制

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In this work, the excimer laser induced crystallization of a-Si films on SiO_2 was investigated, using a long pulse duration (200 ns) XeCl source. The microstructural analysis of the laser irradiated area, for incident energy densities comprised between the surface and full melting thresholds of the a-Si layer, respectively, was performed by scanning electron microscopy. A numerical simulation of the surface melt dynamics was also presented and compared to the experimental observatons. direct c 1999 Elsevier Science S.A. All rights reserved.

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来源
《Thin film materials for large area electronics》|1998年|p.143-147|共5页
会议地点 Strasbourg(FR)
作者
E.Fogarassy; S. de Unamuno; P.Legagneux; F.Plais; D.Pribat; B.Godard; M.Stehle;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
Excimer laser; Silicon crystallization; Melting grains;

机译：准分子激光；硅结晶；谷物融化;

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专利

1. Effects of Si film thickness and substrate temperature on melt duration observed in excimer laser-induced crystallization of amorphous Si thin films using in-situ transient reflectivity measurements [J] . Chil-Chyuan Kuo, Wen-Chang Yeh, Ji-Feng Lee, Thin Solid Films . 2007,第20a21期

机译：利用原位瞬态反射率测量，准分子激光诱导非晶硅薄膜结晶过程中观察到的硅膜厚度和衬底温度对熔化时间的影响
2. Observation of super lateral growth in long pulse (170 ns) excimer laser crystallization of a-Si films [J] . A. Pecora, R. Carluccio, L. Mariucci, Thin Solid Films . 2003,第1a2期

机译：非晶硅薄膜在长脉冲（170 ns）准分子激光结晶中的超横向生长观察
3. Dynamical process of KrF pulsed excimer laser crystallization of ultrathin amorphous silicon films to form Si nano-dots [J] . Guran Chen, Jun Xu, Wei Xu, Journal of Applied Physics . 2012,第9期

机译：超薄非晶硅薄膜KrF脉冲准分子激光结晶形成Si纳米点的动力学过程
4. Surface melt dynamics and super lateral growth regime in long pulse duration excimer laser crystallization of amorphous Si films [C] . E. Fogarassy, S. de Unamuno, P. Legagneux, Symposium E on thin film materials for large area electronics of the E-MRS 1998 spring conference . 1999

机译：无定形Si薄膜长脉冲持续时间准分子激光结晶的表面熔体动力学和超横向生长状态
5. Excimer-laser crystallization of amorphous silicon thin films [D] . Viatella, John Wade 1997

机译：非晶硅薄膜的准分子激光结晶
6. Large-Scale and Localized Laser Crystallization of Optically Thick Amorphous Silicon Films by Near-IR Femtosecond Pulses [O] . Kirill Bronnikov, Alexander Dostovalov, Artem Cherepakhin, 2020

机译：近红外Femtosecond脉冲的光学厚非晶硅膜的大规模和局部激光结晶
7. Excimer Laser Crystallization Processes of Amorphous Silicon Thin Films by Using Molecular-dynamics Simulations [O] . Shinji Munetoh, Xiao Yan Ping, Tomohiko Ogata, 2010

机译：采用分子动力学模拟通过分子动力学薄膜的准分子激光结晶过程
8. Excimer Laser Crystallization of Silicon Films: Artificially-Controlled Super Lateral Growth for Grain Boundary Location-Controlled and Single Crystal Island Materials for Thin Film Transistor Applications [R] . Im, J. S. , Sposili, R. S. 1998

机译：硅薄膜准分子激光晶化：用于薄膜晶体管应用的晶界限位和单晶岛材料的人工控制超横向生长

Surface melt dynamics and super lateral growth regime in long pulse duration excimer laser crystallization of amorphous Si films

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