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Structure of polycrystalline silicon films deposited at low temperature by plasma CVD on substrates exposed to different plasma

机译：通过等离子体CVD在暴露于不同等离子体的基板上低温沉积的多晶硅膜的结构

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Polycrystalline silicon (poly-Si) films were deposited on glass substrates (corning 7059) at 300 deg C by a plasma enhanced chemical vapor deposition (PECVD) from a SiH_4/SiF_

机译：通过等离子增强化学气相沉积（PECVD），从SiH_4 / SiF_中将多晶硅（poly-Si）膜沉积在玻璃衬底上（角膜7059），温度为300摄氏度。

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来源
《Thin film materials for large area electronics》|1998年|p.27-31|共5页
会议地点 Strasbourg(FR)
作者
S.Moniruzzaman; T.Inokuma; Y.Kurata; S.Takenaka; S.Hasegawa;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
Poly-Si; Surface treatment; Structural properties; Plasma enhanced chemical vapor deposition; Nucleation density;

机译：多晶硅表面处理;结构性质；等离子体增强化学气相沉积；成核密度;

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专利

1. Effect of Plasma Power on Structure of Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition at a Low Substrate Temperature [J] . Shinsuke Miyajima, Makoto Sawamura, Akira Yamada, Japanese journal of applied physics . 2008,第5issue1期

机译：等离子体功率对低基底温度下超高频等离子体增强化学气相沉积法沉积氢化纳米晶立方碳化硅薄膜结构的影响
2. Growth of nanocrystalline diamond films deposited by microwave plasma CVD system at low substrate temperatures [J] . S. Potocky, A. Kromka, J. Potmesil, Physica Status Solidi. A, Applications and Materials Science . 2006,第12期

机译：微波等离子CVD系统在低衬底温度下生长纳米晶金刚石膜
3. Characterization of silicon nitride thin films deposited by reactive sputtering and plasma-enhanced CVD at low temperatures [J] . Mayumi B. Takeyama, Masaru Sato, Yoshihiro Nakata, Japanese journal of applied physics . 2014,第5S2期

机译：低温下通过反应溅射和等离子增强CVD沉积的氮化硅薄膜的特性
4. Structure of polycrystalline silicon films deposited at low temperature by plasma CVD on substrates exposed to different plasma [C] . S. Moniruzzaman, T. Inokuma, Y. Kurata, Symposium E on thin film materials for large area electronics of the E-MRS 1998 spring conference . 1999

机译：在暴露于不同等离子体上的基板上通过等离子体CVD沉积在低温下沉积多晶硅膜的结构
5. Control of bulk and interface properties in the fabrication of hydrogenated amorphous silicon films and structures by plasma CVD. [D] . Nag, Somnath S. 1992

机译：通过等离子体CVD控制氢化非晶硅膜和结构中的体积和界面特性。
6. Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration [O] . Romain Cariou, Wanghua Chen, Jean-Luc Maurice, -1

机译：GaAs上的低温等离子体增强了CVD的硅外延生长：III-V / Si集成的新范例
7. Effect of substrate temperature on deposition rate of rf plasma-deposited hydrogenated amorphous silicon thin films [O] . Andújar Bella José Luis, Bertran Serra Enric, Canillas i Biosca Adolf, 2012

机译：衬底温度对射频等离子体沉积氢化非晶硅薄膜沉积速率的影响

Structure of polycrystalline silicon films deposited at low temperature by plasma CVD on substrates exposed to different plasma

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