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Self organization of Ge dots on Si substrates: influence of misorientation

机译：Si衬底上Ge点的自组织：取向错误的影响

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The growth of self organized fully strained Ge dots is accomplished by using a two step process which consists of depositing Ge dots on a periodic unidirectional undulated Si_(1-x)GE_x (118) template layer. The main reason for this methodology is to make use of the stress driven step bunching that develops on a (118) surface (10 deg off (001)). In this report we concentrate on the growth mechanism of Ge on the Si_(1-x)Ge_x template layer. RHEED and TEM measurements were used to determine the 2D-3D growth transition as a function of Ge coverage. We find that the onset of the 3D island formation changes from 4 to 7 ML on the (001) and (118) surfaces, respectively. While 3D islands are mainly isotropic on Si (001) they elongate along the step edge direction on misoriented surfaces with a reduction of their lateral size in one direction. AFM measurements are presented which show the wire shaped Ge islands on the top of the Si_(1-x)Ge_x (118) template undulation with improved size homogeneity. The correlation-length of the undulation is mainly controlled by the Ge content of the Si_(1-x)Ge_x layer, for example 20 nm large islands are grown on the top of Si_(0.6)Ge_(0.4)(118). Low temperature photoluminescence spectra are also described which show the evolution of features associated with the Si_(1-x)Ge_x template layer for Ge coverage between 1 and 6 ML. Dramatic changes of the photo-luminescence spectra were found for a Ge coverage of 7 ML, the dominant band seen for that coverage is shown to be related to 3D island formation. The influence of the growth conditions on the PL results is also discussed.
机译：自组织的完全应变Ge点的生长是通过两步过程完成的，该过程包括在周期性单向起伏的Si_（1-x）GE_x（118）模板层上沉积Ge点。这种方法的主要原因是要利用在（118）表面（与001偏离10度）上产生的应力驱动阶梯成束。在本报告中，我们重点介绍Si_（1-x）Ge_x模板层上Ge的生长机制。 RHEED和TEM测量用于确定2D-3D生长过渡与Ge覆盖率的关系。我们发现3D岛形成的开始分别在（001）和（118）表面上从4 ML变为7 ML。尽管3D岛在Si（001）上主要是各向同性的，但它们在未定向的表面上沿台阶边缘方向延伸，并且在一个方向上的横向尺寸减小。提出了AFM测量，该测量显示了Si_（1-x）Ge_x（118）模板起伏顶部的线状Ge岛，具有改善的尺寸均匀性。波动的相关长度主要由Si_（1-x）Ge_x层的Ge含量控制，例如在Si_（0.6）Ge_（0.4）（118）的顶部生长20nm的大岛。还描述了低温光致发光光谱，该光谱显示了与Si_（1-x）Ge_x模板层相关的特征在1到6 ML之间的Ge覆盖范围内的演变。发现Ge覆盖率为7 ML时，光致发光光谱发生了戏剧性的变化，该覆盖率所见的主要谱带与3D岛的形成有关。还讨论了生长条件对PL结果的影响。

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